Add to ORKGImprovements in optical and electrical properties were observed after ruthenium passivation of gallium antimonide surfaces. On passivation, luminescence efficiency increased up to 50 times and surface state density reduced by two orders of magnitude. Also, the reverse leakage current was found to decrease by a factor of 30�40 times. Increase in carrier mobility as a result of grain boundary passivation in polycrystalline GaSb was observed. © 1995 American Institute of Physics
In this paper, we report on the electrical and optical properties of undoped GaSb samples grown by M...
Etching and sulfuring are equally important process during the surface sulfur passiva-tion of galliu...
In this work the influence of aqueous sulfur passivation on the surface of n-type (100) GaSb single ...
Improvements in optical and electrical properties were observed after ruthenium passivation of galli...
Improvement in optical and electrical properties were observed after sulphur passivation of gallium ...
Improvement in optical and surface morphology were observed after sulphur passivation of gallium ant...
In this paper, (NH4)2S and Na2S were used as passivating agent for the sulphuration treatment of GaS...
The effect of hydrogen plasma treatment on the optical and electrical properties of Gallium Antimoni...
The effectiveness of chemical surface treatment of GaAs using (NH4)2Sx, Na2S and RuCl3 has been stud...
A new class of insulating and passivating layers on gallium antimonide has been prepared by means of...
The suppression of leakage current via surface passivation plays a critical role for GaSb‐based opto...
GaSb is one of the most suitable semiconductors for optoelectronic devices operating in the mid-infr...
Recent advances in nonsilica fiber technology have prompted the development of suitable materials fo...
In this study, we have investigated the photo-response of gallium antimonide (GaSb) by measuring the...
This thesis is devoted to improving the spectroscopic performance of the gallium antimonide (GaSb)/a...
In this paper, we report on the electrical and optical properties of undoped GaSb samples grown by M...
Etching and sulfuring are equally important process during the surface sulfur passiva-tion of galliu...
In this work the influence of aqueous sulfur passivation on the surface of n-type (100) GaSb single ...
Improvements in optical and electrical properties were observed after ruthenium passivation of galli...
Improvement in optical and electrical properties were observed after sulphur passivation of gallium ...
Improvement in optical and surface morphology were observed after sulphur passivation of gallium ant...
In this paper, (NH4)2S and Na2S were used as passivating agent for the sulphuration treatment of GaS...
The effect of hydrogen plasma treatment on the optical and electrical properties of Gallium Antimoni...
The effectiveness of chemical surface treatment of GaAs using (NH4)2Sx, Na2S and RuCl3 has been stud...
A new class of insulating and passivating layers on gallium antimonide has been prepared by means of...
The suppression of leakage current via surface passivation plays a critical role for GaSb‐based opto...
GaSb is one of the most suitable semiconductors for optoelectronic devices operating in the mid-infr...
Recent advances in nonsilica fiber technology have prompted the development of suitable materials fo...
In this study, we have investigated the photo-response of gallium antimonide (GaSb) by measuring the...
This thesis is devoted to improving the spectroscopic performance of the gallium antimonide (GaSb)/a...
In this paper, we report on the electrical and optical properties of undoped GaSb samples grown by M...
Etching and sulfuring are equally important process during the surface sulfur passiva-tion of galliu...
In this work the influence of aqueous sulfur passivation on the surface of n-type (100) GaSb single ...