Add to ORKGIt is shown that thermally stimulated photocurrent measurements provide a simple and effective method of determining the activation energy of thermal regeneration rate of EL2 from the metastable state to the normal state in undoped semi‐insulating GaAs. The thermal regeneration rate r is found to be 2.5×108 exp(−0.26 eV/kT) s−1
The temperature dependence of extrinsic and intrinsic photocurrent, in undoped semi-insulating GaAs ...
The electronic absorption of EL2 centers has been clarified to be related to the electron acid hole ...
We measured recovery of the optical absorption of EL2 under [100] and [111] uniaxial stress during h...
It is shown that thermally stimulated photocurrent measurements provide a simple and effective metho...
The bleaching of the EL2 absorption and its thermal regeneration are typical time-dependent processe...
Thermally stimulated current spectroscopy (TSC) with near band-edge and infrared (IR) light excitati...
A prominent thermally stimulated current peak T5 appearing in semi‐insulating GaAs is shown to photo...
Thermally stimulated current (TSC) spectra stimulated by infrared (hν≤1.12 eV) light at 90 K have be...
The transformations between the normal and metastable state of EL2 in GaAs are investigated. We appl...
In this work we report the observation of two different EL2 metastable states in GaAs and the effect...
The optical and electrical recovery processes of the metastable state of the EL2 defect artificially...
A detailed analysis of the photocapacitance signal at the near‐band and extrinsic energetic ranges i...
The dynamic process of light illumination of GaAs is studied numerically in this paper to understand...
International audienceWe present a theoretical and experimental analysis of photorefractive two-beam...
We report the effects associated with the transition of the EL2 defect to its metastable state EL2* ...
The temperature dependence of extrinsic and intrinsic photocurrent, in undoped semi-insulating GaAs ...
The electronic absorption of EL2 centers has been clarified to be related to the electron acid hole ...
We measured recovery of the optical absorption of EL2 under [100] and [111] uniaxial stress during h...
It is shown that thermally stimulated photocurrent measurements provide a simple and effective metho...
The bleaching of the EL2 absorption and its thermal regeneration are typical time-dependent processe...
Thermally stimulated current spectroscopy (TSC) with near band-edge and infrared (IR) light excitati...
A prominent thermally stimulated current peak T5 appearing in semi‐insulating GaAs is shown to photo...
Thermally stimulated current (TSC) spectra stimulated by infrared (hν≤1.12 eV) light at 90 K have be...
The transformations between the normal and metastable state of EL2 in GaAs are investigated. We appl...
In this work we report the observation of two different EL2 metastable states in GaAs and the effect...
The optical and electrical recovery processes of the metastable state of the EL2 defect artificially...
A detailed analysis of the photocapacitance signal at the near‐band and extrinsic energetic ranges i...
The dynamic process of light illumination of GaAs is studied numerically in this paper to understand...
International audienceWe present a theoretical and experimental analysis of photorefractive two-beam...
We report the effects associated with the transition of the EL2 defect to its metastable state EL2* ...
The temperature dependence of extrinsic and intrinsic photocurrent, in undoped semi-insulating GaAs ...
The electronic absorption of EL2 centers has been clarified to be related to the electron acid hole ...
We measured recovery of the optical absorption of EL2 under [100] and [111] uniaxial stress during h...