Pressure dependence of the electrical resistivity of bulk, melt quenched GexTe100−x glasses (15 less-than-or-equals, slant x less-than-or-equals, slant 28) has been studied up to 8GPa pressure. All the glasses exhibit a sharp, discontinuous glass to crystal transition under pressure. The high pressure crystalline phases are identified to have a face centered cubic structure. The value of the cell constant is 0.779nm for 15 less-than-or-equals, slant x less-than-or-equals, slant 17, 0.642nm for x=20 and 0.55lnm for 22 ≤ x ≤ 28 samples respectively. The cell constants of the high pressure crystalline phases suggest the possible existance of a new metastable crystalline compound in the Ge---Te system with F.C.C. structure and cell constant equ...
An irreversible pressure induced semiconductor-to-metal transition in bulk Ge<SUB>20</SUB>Te<SUB>80<...
High-pressure resistivity measurements have been performed on G37.5AsxTe92.5-x (x = 20, 40, 45, 50 a...
High-pressure resistivity measurements have been performed on G37.5AsxTe92.5-x (x = 20, 40, 45, 50 a...
Pressure dependence of the electrical resistivity of bulk, melt quenched GexTe100−x glasses (15 less...
Pressure dependence of the electrical resistivity of bulk, melt quenched Ge<SUB>x</SUB>Te<SUB>100-x<...
The electrical resistivity of bulk GexTe100-x glasses has been measured as a function of temperature...
The electrical resistivity of bulk GexTe100-x glasses has been measured as a function of temperature...
The pressure and temperature dependence of the electrical resistivity of bulk glassy Ge<SUB>20</SUB>...
The pressure and temperature dependence of the electrical resistivity of bulk glassy Ge20Te80 is rep...
An irreversible pressure induced semiconductor-to-metal transition in bulk Ge20Te80 glass is observe...
An irreversible pressure induced semiconductor-to-metal transition in bulk Ge20Te80 glass is observe...
Electrical resistivity measurements have been carried out on bulk Ge-Te-Se glasses in a Bridgman anv...
Electrical resistivity measurements have been carried out on bulk Ge-Te-Se glasses in a Bridgman anv...
Electrical resistivity measurements have been carried out on bulk Ge-Te-Se glasses in a Bridgman anv...
The electrical resistivity of bulk Ge<SUB>20</SUB>Te<SUB>80</SUB> has been measured as a function of...
An irreversible pressure induced semiconductor-to-metal transition in bulk Ge<SUB>20</SUB>Te<SUB>80<...
High-pressure resistivity measurements have been performed on G37.5AsxTe92.5-x (x = 20, 40, 45, 50 a...
High-pressure resistivity measurements have been performed on G37.5AsxTe92.5-x (x = 20, 40, 45, 50 a...
Pressure dependence of the electrical resistivity of bulk, melt quenched GexTe100−x glasses (15 less...
Pressure dependence of the electrical resistivity of bulk, melt quenched Ge<SUB>x</SUB>Te<SUB>100-x<...
The electrical resistivity of bulk GexTe100-x glasses has been measured as a function of temperature...
The electrical resistivity of bulk GexTe100-x glasses has been measured as a function of temperature...
The pressure and temperature dependence of the electrical resistivity of bulk glassy Ge<SUB>20</SUB>...
The pressure and temperature dependence of the electrical resistivity of bulk glassy Ge20Te80 is rep...
An irreversible pressure induced semiconductor-to-metal transition in bulk Ge20Te80 glass is observe...
An irreversible pressure induced semiconductor-to-metal transition in bulk Ge20Te80 glass is observe...
Electrical resistivity measurements have been carried out on bulk Ge-Te-Se glasses in a Bridgman anv...
Electrical resistivity measurements have been carried out on bulk Ge-Te-Se glasses in a Bridgman anv...
Electrical resistivity measurements have been carried out on bulk Ge-Te-Se glasses in a Bridgman anv...
The electrical resistivity of bulk Ge<SUB>20</SUB>Te<SUB>80</SUB> has been measured as a function of...
An irreversible pressure induced semiconductor-to-metal transition in bulk Ge<SUB>20</SUB>Te<SUB>80<...
High-pressure resistivity measurements have been performed on G37.5AsxTe92.5-x (x = 20, 40, 45, 50 a...
High-pressure resistivity measurements have been performed on G37.5AsxTe92.5-x (x = 20, 40, 45, 50 a...