Experiments in spintronics necessarily involve the detection of spin polarization. The sensitivity of this detection becomes an important factor to consider when extending the low temperature studies on semiconductor spintronic devices to room temperature, where the spin signal is weaker. In pump-probe experiments, which optically inject and detect spins, the sensitivity is often improved by using a photoelastic modulator (PEM) for lock-in detection. However, spurious signals can arise if diode lasers are used as optical sources in such experiments, along with a PEM. In this work, we eliminated the spurious electromagnetic coupling of the PEM onto the probe diode laser, by the double modulation technique. We also developed a test for spurio...
International audienceThe picosecond and subpicosecond dynamics of spins in intrinsic and n-doped Ga...
The work deals with the dynamics of spin-polarized charge carriers and their inuence on the magnetiz...
Optically oriented electron spin lifetime in n-doped gallium arsenide was measured via depolarizatio...
Experiments in spintronics necessarily involve the detection of spin polarization. The sensitivity o...
International audienceInstruments based on the magneto-optical Kerr effect are routinely used to pro...
This work explores the use of the magneto-optical Kerr effect to study conduction electron spin dyna...
Gallium arsenide (GaAs) is a semiconductor that possesses a direct band gap whose optical transition...
The lateral spatial separation between the circular polarization components of a linearly polarized ...
A novel experimental setup has been realized to measure weak magnetic moments which can be modulated...
We have made a Kerr rotation (KR) measurement instrument with a 635~nm laser that is sensitive enoug...
The nuclear spin system of semiconductor crystals displays a remarkable degree of environmental isol...
The lateral spatial separation between the circular polarization components of a lin-early polarized...
Introducing spin-polarized carriers in semiconductor lasers reveals an alternative path to realize r...
We correlated experimental results with theoretical estimations of the dielectric function ε(ω) in t...
This work is dedicated to the study of spin dynamics in systems based on the semiconductor gallium a...
International audienceThe picosecond and subpicosecond dynamics of spins in intrinsic and n-doped Ga...
The work deals with the dynamics of spin-polarized charge carriers and their inuence on the magnetiz...
Optically oriented electron spin lifetime in n-doped gallium arsenide was measured via depolarizatio...
Experiments in spintronics necessarily involve the detection of spin polarization. The sensitivity o...
International audienceInstruments based on the magneto-optical Kerr effect are routinely used to pro...
This work explores the use of the magneto-optical Kerr effect to study conduction electron spin dyna...
Gallium arsenide (GaAs) is a semiconductor that possesses a direct band gap whose optical transition...
The lateral spatial separation between the circular polarization components of a linearly polarized ...
A novel experimental setup has been realized to measure weak magnetic moments which can be modulated...
We have made a Kerr rotation (KR) measurement instrument with a 635~nm laser that is sensitive enoug...
The nuclear spin system of semiconductor crystals displays a remarkable degree of environmental isol...
The lateral spatial separation between the circular polarization components of a lin-early polarized...
Introducing spin-polarized carriers in semiconductor lasers reveals an alternative path to realize r...
We correlated experimental results with theoretical estimations of the dielectric function ε(ω) in t...
This work is dedicated to the study of spin dynamics in systems based on the semiconductor gallium a...
International audienceThe picosecond and subpicosecond dynamics of spins in intrinsic and n-doped Ga...
The work deals with the dynamics of spin-polarized charge carriers and their inuence on the magnetiz...
Optically oriented electron spin lifetime in n-doped gallium arsenide was measured via depolarizatio...