3% and 5% Mn-doped GaN nanocrystals of different sizes, with the average diameters in the range of 4-18 nm, have been prepared by two independent routes under solvothermal conditions starting with two different precursors. The reaction temperature was around 350 degrees C in all the preparations. The nanocrystals so prepared exhibit ferromagnetism with magnetization (M) and Curie temperature (T-C) values increasing with percent of Mn and particle size. The observation of ferromagnetism in Mn-doped GaN nanocrystals prepared at relatively low temperatures is of significance in understanding this potential in spintronics materials
We report a new method for large-scale production of GaMnN nanowires, by annealing manganese-gallium...
Due to their striking magnetic properties, magnetic iron nitride-based (FexN and GayFexN) compounds...
A GaN film doped with 8.2 % Mn was grown by the molecular-beam-epitaxy technique. Magnetization meas...
3% and 5% Mn-doped GaN nanocrystals of different sizes, with the average diameters in the range of 4...
The ferromagnetic and electrical characteristics of in situ Mn-doped GaN nanowires fabricated in the...
Magnetic nanocrystals embedded in a semiconducting matrix are gaining increasing attention for poten...
Room-temperature ferromagnetism has been observed in undoped GaN and CdS semiconductor nanoparticles...
Doping of magnetic element Mn and Cr in GaN was achieved by thermal diffusion. The conductivity of t...
Doping of magnetic element Mn and Cr in GaN was achieved by thermal diffusion. The conductivity of t...
Doping of magnetic element Mn and Cr in GaN was achieved by thermal diffusion. The conductivity of t...
The microstructural evolution of Mn-implanted p-type GaN has been studied using cross-sectional tran...
Due to their striking magnetic properties, magnetic iron nitride-based (FexN and GayFexN) compounds ...
We have investigated the magnetic and optical properties of dislocation-free vertical GaN nanorods w...
Wurtzite GaN:Mn films with an extremely high Curie temperature of around 940 K and Mn concentration ...
With a high surface-to-volume ratio, a Ga-polar GaN nanorod array was designed and obtained as a pre...
We report a new method for large-scale production of GaMnN nanowires, by annealing manganese-gallium...
Due to their striking magnetic properties, magnetic iron nitride-based (FexN and GayFexN) compounds...
A GaN film doped with 8.2 % Mn was grown by the molecular-beam-epitaxy technique. Magnetization meas...
3% and 5% Mn-doped GaN nanocrystals of different sizes, with the average diameters in the range of 4...
The ferromagnetic and electrical characteristics of in situ Mn-doped GaN nanowires fabricated in the...
Magnetic nanocrystals embedded in a semiconducting matrix are gaining increasing attention for poten...
Room-temperature ferromagnetism has been observed in undoped GaN and CdS semiconductor nanoparticles...
Doping of magnetic element Mn and Cr in GaN was achieved by thermal diffusion. The conductivity of t...
Doping of magnetic element Mn and Cr in GaN was achieved by thermal diffusion. The conductivity of t...
Doping of magnetic element Mn and Cr in GaN was achieved by thermal diffusion. The conductivity of t...
The microstructural evolution of Mn-implanted p-type GaN has been studied using cross-sectional tran...
Due to their striking magnetic properties, magnetic iron nitride-based (FexN and GayFexN) compounds ...
We have investigated the magnetic and optical properties of dislocation-free vertical GaN nanorods w...
Wurtzite GaN:Mn films with an extremely high Curie temperature of around 940 K and Mn concentration ...
With a high surface-to-volume ratio, a Ga-polar GaN nanorod array was designed and obtained as a pre...
We report a new method for large-scale production of GaMnN nanowires, by annealing manganese-gallium...
Due to their striking magnetic properties, magnetic iron nitride-based (FexN and GayFexN) compounds...
A GaN film doped with 8.2 % Mn was grown by the molecular-beam-epitaxy technique. Magnetization meas...