Add to ORKGTwo traps with activation energies of $E_c$ - 0.47 eV and $E_v + 0.79 eV$ were detected in semi-insulating GaAs:Cr through optical transient current spectroscopy (OTCS) in the temperature range 300-450 K. The latter trap gives rise to rising current transients, which result in a negative peak in the OTCS spectrum. The theoretical expressions for current transients have been derived
In the thermally stimulated current spectra of semi-insulating GaAs, a unique trap T-a at 170K is so...
The deep levels were investigated by the deep level transient spectroscopy (DLTS) technique in Si- a...
The first thermally stimulated current (TSC) and deep level transient spectroscopy (DLTS) studies pe...
Two traps with activation energies of $E_c$ - 0.47 eV and $E_v + 0.79 eV$ were detected in semi-insu...
Thermally stimulated current (TSC) and photo induced current transient spectroscopy (PICTS) were us...
Work is reported on three topics relating to problems which hold back the development of GaAs integr...
A well-known technique—Deep level Transient Spectroscopy (DLTS)—was used for investigating deep leve...
160 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1980.System effects and data analy...
The investigation of deep levels of argon-implanted LEC-grown semi-insulating GaAs with implantation...
A method is presented, which combines optical excitation and electrical refilling of deep levels, al...
Thermally stimulated current (TSC) spectra stimulated by infrared (hν≤1.12 eV) light at 90 K have be...
The trap levels in Ga-rich GaAs crystals were studied in the temperature range of 10-300 K using the...
Semi-insulating gallium arsenide has been irradiated by protons and by gamma-rays with different dos...
The origins and characteristic parameters of levels occurring deep in the band gap of semiconductors...
Optical transient current spectroscopy (OTCS) has been used to investigate defects in the low-temper...
In the thermally stimulated current spectra of semi-insulating GaAs, a unique trap T-a at 170K is so...
The deep levels were investigated by the deep level transient spectroscopy (DLTS) technique in Si- a...
The first thermally stimulated current (TSC) and deep level transient spectroscopy (DLTS) studies pe...
Two traps with activation energies of $E_c$ - 0.47 eV and $E_v + 0.79 eV$ were detected in semi-insu...
Thermally stimulated current (TSC) and photo induced current transient spectroscopy (PICTS) were us...
Work is reported on three topics relating to problems which hold back the development of GaAs integr...
A well-known technique—Deep level Transient Spectroscopy (DLTS)—was used for investigating deep leve...
160 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1980.System effects and data analy...
The investigation of deep levels of argon-implanted LEC-grown semi-insulating GaAs with implantation...
A method is presented, which combines optical excitation and electrical refilling of deep levels, al...
Thermally stimulated current (TSC) spectra stimulated by infrared (hν≤1.12 eV) light at 90 K have be...
The trap levels in Ga-rich GaAs crystals were studied in the temperature range of 10-300 K using the...
Semi-insulating gallium arsenide has been irradiated by protons and by gamma-rays with different dos...
The origins and characteristic parameters of levels occurring deep in the band gap of semiconductors...
Optical transient current spectroscopy (OTCS) has been used to investigate defects in the low-temper...
In the thermally stimulated current spectra of semi-insulating GaAs, a unique trap T-a at 170K is so...
The deep levels were investigated by the deep level transient spectroscopy (DLTS) technique in Si- a...
The first thermally stimulated current (TSC) and deep level transient spectroscopy (DLTS) studies pe...