DLTS investigation of iron level in gallium arsenide

A DLTS (deep-level transient spectroscopy) system is described, which was used to show the presence, in GaAs:Fe n+-p diodes, of 1 impurity level at 0.63 eV, with a majority-carrier capture cross section of 1.63 X 10-17 cm2. The activation energy of Au in n-Si was detd. as 0.54 eV by this system, in agreement with the accepted valu