Add to ORKGdc reactive magnetron sputtering technique was employed for deposition of tantalum oxide films on quartz and silicon substrates by sputtering of pure tantalum target in the presence of oxygen and argon gases under various substrate temperatures in the range 303–973 K. The variation of cathode potential with the oxygen partial pressure was systematically studied. The influence of substrate temperature on the chemical binding configuration, crystal structure and optical properties was investigated. X-ray photoelectron spectroscopic studies indicated that the films formed at oxygen partial pressures \geq1 × $10^{-4}$ mbar were stoichiometric. The Fourier transform infrared spectroscopic studies revealed that the films formed up to substrate te...
The main purpose of this work is to present and to interpret the change of structure and physical pr...
There is a critical demand for new dielectric films having higher dielectric constants, higher diele...
Tantalum pentoxide (Ta(2)O(5)) thin films (20 to 44 nm) have been grown by 1064 nm Nd:YAG laser oxid...
dc reactive magnetron sputtering technique was employed for deposition of tantalum oxide films on qu...
Tantalum oxide (Ta2O5) films were formed on silicon (111) and quartz substrates by dc reactive magne...
Rf magnetron sputtering technique was employed for preparation of tantalum oxide films on quartz and...
Rf magnetron sputtering technique was employed for preparation of tantalum oxide films on quartz and...
Good quality tantalum oxide films with a refractive index of 2.10 and an absorption coefficient less...
Rapid thermal processed thin films of reactively sputtered tantalum pentoxide Ta2O5 thin films have ...
Rapid thermal processed thin films of reactively sputtered tantalum pentoxide Ta2O5 thin films have ...
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on th...
In this study, tin oxide (SnO2) thin films doped with 1 cation percent tantalum were deposited on am...
In this study, tin oxide (SnO2) thin films doped with 1 cation percent tantalum were deposited on am...
The main purpose of this work is to present and to interpret the change of structure and physical p...
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on th...
The main purpose of this work is to present and to interpret the change of structure and physical pr...
There is a critical demand for new dielectric films having higher dielectric constants, higher diele...
Tantalum pentoxide (Ta(2)O(5)) thin films (20 to 44 nm) have been grown by 1064 nm Nd:YAG laser oxid...
dc reactive magnetron sputtering technique was employed for deposition of tantalum oxide films on qu...
Tantalum oxide (Ta2O5) films were formed on silicon (111) and quartz substrates by dc reactive magne...
Rf magnetron sputtering technique was employed for preparation of tantalum oxide films on quartz and...
Rf magnetron sputtering technique was employed for preparation of tantalum oxide films on quartz and...
Good quality tantalum oxide films with a refractive index of 2.10 and an absorption coefficient less...
Rapid thermal processed thin films of reactively sputtered tantalum pentoxide Ta2O5 thin films have ...
Rapid thermal processed thin films of reactively sputtered tantalum pentoxide Ta2O5 thin films have ...
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on th...
In this study, tin oxide (SnO2) thin films doped with 1 cation percent tantalum were deposited on am...
In this study, tin oxide (SnO2) thin films doped with 1 cation percent tantalum were deposited on am...
The main purpose of this work is to present and to interpret the change of structure and physical p...
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on th...
The main purpose of this work is to present and to interpret the change of structure and physical pr...
There is a critical demand for new dielectric films having higher dielectric constants, higher diele...
Tantalum pentoxide (Ta(2)O(5)) thin films (20 to 44 nm) have been grown by 1064 nm Nd:YAG laser oxid...