Low pressure MOCVD of $Er_2O_3$ and $Gd_2O_3$ films

In this paper, we present a comparative study of microstructure, crystallinity, and physical properties of MOCVD-grown $Er_2O_3$ and $Gd_2O_3$ films, which are grown under identical conditions and using analogous precursors. They are characterized by the variety of techniques for their structure and properties. As-grown films were polycrystalline. Incorporation of heteroatomic species into the film's matrix, such as carbon, was dependent onto the oxides types and film's growth conditions. $Er_2O_3$ film displays 5.8 eV and $Gd_2O_3$ film exhibit 5.4 eV bandgap. Electrical characterizations show that the as-grown films were leaky. Thin films of $Er_2O_3$ display similar properties as observed in their thick counterparts, which manifest that it is possible to scale down these films for potential uses