Recent investigations on the growth of antimony based semiconductors

Investigations related to the bulk and thin film growth of two of the antimony based semiconductors, viz, GaSb and InSb are presented. High quality single crystals of GaSb and InSb were grown using vertical Bridgman technique. The influence of the shape of the melt-solid interface on the quality of the grown crystals is discussed. Various factors influencing the interface shape during growth are studied. Furthermore, the effects of temperature gradient (G) and ampoule lowering rate (v) on the composition and other properties of the gown crystals are investigated. Some preliminary studies on the growth of these antimonides by liquid phase epitaxy are also discusse