A general treatment of a diffusion-controlled growth of a stoichiometric intermetallic in reaction between two two-phase alloys is introduced. A reaction couple, in which a layer of $Co_2Si$ is formed during interdiffusion from its adjacent saturated phases is used as a model system. On the basis of chemical reaction equations occurring at the interphase interfaces, data on relative mobilities of diffusing species and the integrated diffusion coefficient in the product phase are deduced. The analysis yields numerical results identical to those calculated from classical Wagner’s theory for the case in which the terminal phases of the diffusion couple are initially saturated
A mathematical model to describe the growth of silicides layers in metal - silicon diffusion couples...
There have been number of efforts to develop a model that could be used to predict and to describe p...
A theoretical approach to consider formation of chemical compound layer at the interface between ini...
A general treatment of a diffusion-controlled growth of a stoichiometric intermetallic in reaction b...
A diffusion-controlled growth of intermettalic phases and the role of the Kirkendall effect in morph...
A physico-chemical approach is developed, which can be used in binary diffusion couples to determine...
Diffusion couples, in which one single-phased layer of Co-silicide is growing from its saturated adj...
The formation of intermetallic reaction layers was investigated for interdiffusion between a low car...
Interdiffusion in hypothetical ternary single-phase and two-phase diffusion couples are examined usi...
The relations for the growth and consumption rates of a layer with finite thickness as an end member...
Interdiffusion in hypothetical ternary single-phase and two-phase diffusion couples are examined usi...
A mathematical model to describe the growth of silicides layers in metal - silicon diffusion couples...
There have been number of efforts to develop a model that could be used to predict and to describe p...
A theoretical approach to consider formation of chemical compound layer at the interface between ini...
A general treatment of a diffusion-controlled growth of a stoichiometric intermetallic in reaction b...
A diffusion-controlled growth of intermettalic phases and the role of the Kirkendall effect in morph...
A physico-chemical approach is developed, which can be used in binary diffusion couples to determine...
Diffusion couples, in which one single-phased layer of Co-silicide is growing from its saturated adj...
The formation of intermetallic reaction layers was investigated for interdiffusion between a low car...
Interdiffusion in hypothetical ternary single-phase and two-phase diffusion couples are examined usi...
The relations for the growth and consumption rates of a layer with finite thickness as an end member...
Interdiffusion in hypothetical ternary single-phase and two-phase diffusion couples are examined usi...
A mathematical model to describe the growth of silicides layers in metal - silicon diffusion couples...
There have been number of efforts to develop a model that could be used to predict and to describe p...
A theoretical approach to consider formation of chemical compound layer at the interface between ini...