Effect of hydrogenation and thermal annealing on the photoluminescence of p-InP

The effect of hydrogenation and thermal annealing on the photoluminescence (PL) of 1nP:Mg and 1nP:Zn is presented. On hydrogenation, a rise in near-band-edge PL intensity by a factor of 16 for the InP:Mg sample and a factor of 50 for the InP:Zn sample is observed and this is attributed to the passivation of nonradiative centers. A donor-acceptor pair transition before hydrogenation in the lnP:Mg sample and after hydrogenation in the 1nP:Zn sample was observed. In both cases, the magnitude of the shift in peak position with excitation intensity shows the involvement of a donor deeper than the normally present shallow donors. The ionization energy of the donor in 1nP:Mg is estimated to be 48 meV and that in InP:Zn is estimated to be