Add to ORKGIndium antimonide and gallium antimonide were synthesized from the respective component elements using an indigenously fabricated synthesis unit. Bulk crystals of indium antimonide and gallium antimonide were grown using both the vertical and horizontal Bridgman techniques. Effect of ampoule shapes and diameters on the crystallinity and homogeneity was studied. The grown crystals were characterized using X-ray analysis, EDAX, chemical etching, Hall effect and conductivity measurements. In the case of gallium antimonide, effect of dopants (Te and In) on transport and photoluminescence properties was investigated
Thermophotovoltaic generation of electricity is attracting renewed attention due to recent advances ...
This report is about characterization of the narrow bandgap semiconductor. The semiconductor used in...
The nature and the spatial distribution of radiative defects in InxGa1-xSb grown by the vertical Bri...
Indium antimonide and gallium antimonide were synthesized from the respective component elements usi...
Abstract. We consider the growth technology and investigations of indium antimonide doped concurrent...
Investigations related to the bulk and thin film growth of two of the antimony based semiconductors,...
Currently there is a worldwide trend to increase the diameter of crystals grown from elemental semic...
Bulk crystals of Ga0.9In0.1Sb have been grown using vertical directional solidification (VDS) techni...
Indium Antimonide (InSb) has possibility to be developed as the next generation radiation detector d...
Technical Physics Division, Bhabha Atomic Research Centre Trombay, Bombay 400085 Manuscript receive...
The homogeneity and luminescence properties of undoped bulk GaSb have been studied by the cathodolum...
International audienceThe dewetting technique has been applied to the growth of InSb and GaSb polycr...
The indium monoiodide (InI) semiconductor is a promising candidate for Gamma-ray and X-ray radiation...
A systematic study of the role of the melt–solid interface position in determining the crystal quali...
This paper presents the results of our interface demarcation experiments during vertical Bridgman gr...
Thermophotovoltaic generation of electricity is attracting renewed attention due to recent advances ...
This report is about characterization of the narrow bandgap semiconductor. The semiconductor used in...
The nature and the spatial distribution of radiative defects in InxGa1-xSb grown by the vertical Bri...
Indium antimonide and gallium antimonide were synthesized from the respective component elements usi...
Abstract. We consider the growth technology and investigations of indium antimonide doped concurrent...
Investigations related to the bulk and thin film growth of two of the antimony based semiconductors,...
Currently there is a worldwide trend to increase the diameter of crystals grown from elemental semic...
Bulk crystals of Ga0.9In0.1Sb have been grown using vertical directional solidification (VDS) techni...
Indium Antimonide (InSb) has possibility to be developed as the next generation radiation detector d...
Technical Physics Division, Bhabha Atomic Research Centre Trombay, Bombay 400085 Manuscript receive...
The homogeneity and luminescence properties of undoped bulk GaSb have been studied by the cathodolum...
International audienceThe dewetting technique has been applied to the growth of InSb and GaSb polycr...
The indium monoiodide (InI) semiconductor is a promising candidate for Gamma-ray and X-ray radiation...
A systematic study of the role of the melt–solid interface position in determining the crystal quali...
This paper presents the results of our interface demarcation experiments during vertical Bridgman gr...
Thermophotovoltaic generation of electricity is attracting renewed attention due to recent advances ...
This report is about characterization of the narrow bandgap semiconductor. The semiconductor used in...
The nature and the spatial distribution of radiative defects in InxGa1-xSb grown by the vertical Bri...