Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes
- Rodrigues, D.H.
- Brasil, M.J.S.P.
- Orlita, M.
- Kunc, J.
- Galeti, H.V.A.
- Henini, M.
- Taylor, D.
- H.V.A., Y.G.
DOIAbstract
We have investigated the polarization-resolved electroluminescence (EL) of a p–i–n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x = 5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunneling condition, the GaMnAs contact acts as an efficient spin-polarized source for holes tunneling through the device. Polarization degrees up to 80% were observed in the device around the hole resonance at 2 K under 15 T. Our results could be valuable for improving the hole-spin injection in GaMnAs-based spintronic devices
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