3 mm × 3 mm dummy SiC dies with 100\200\200 nm thick Ti\W\Au metallization have simultaneously been attached using sintering of Ag nanoparticle paste on AlN-based direct bonded copper substrates with 5\0.1 μm thick NiP\Au finish. The effect of preparation and sintering parameters including time of drying the printed paste, sintering temperature and time, and pressure, on the average shear strength for multiple die attachments was investigated. The surfaces of the die attachments after the shear tests were observed and the individual shear strength values correlated with the “apparent” porosity and thicknesses of the corresponding die attachments (sintered layer). The results obtained are further discussed and compared with typical data repo...
Low-temperature joining with sintered silver is being developed as a lead-free, non-solder, die-atta...
\ua9 2019, Emerald Publishing Limited. Purpose: This study aims to develop a bimodal nano-silver pas...
An Ag-Al nanopaste for high temperature die attach applications on SiC power devices has been develo...
Abstract3mm×3mm dummy SiC dies with 100\200\200nm thick Ti\W\Au metallization have simultaneously be...
This study investigates a time-reduced sintering process for die attachment, prepared, within a proc...
This study focused on the time-reduced sintering process of nanosilver film and power cycling reliab...
Next generation power modules empowered by wide bandgap semiconductors like SiC and GaN can operate ...
© 2014 Copyright © Taylor & Francis Group, LLC. The samples of sintered Ag joints for power die at...
The samples of sintered Ag joints for power die attachments were prepared using paste of Ag nanopart...
This study investigates the power cycling reliability of nanosilver sintered joints formed by a time...
Pressure-assisted sintering processes to attach power devices using wet nanosilver pastes with time ...
Pressure-assisted sintering processes to attach power devices using wet nanosilver pastes with time ...
13.5 mm × 13.5 mm sintered nano-silver attachments for power devices onto AlN substrates were prepar...
Nowadays, numerous power electronics application requires operation at high temperatures. In order t...
For decades soldering has been the technology of choice in die bonding. However, due to worldwide he...
Low-temperature joining with sintered silver is being developed as a lead-free, non-solder, die-atta...
\ua9 2019, Emerald Publishing Limited. Purpose: This study aims to develop a bimodal nano-silver pas...
An Ag-Al nanopaste for high temperature die attach applications on SiC power devices has been develo...
Abstract3mm×3mm dummy SiC dies with 100\200\200nm thick Ti\W\Au metallization have simultaneously be...
This study investigates a time-reduced sintering process for die attachment, prepared, within a proc...
This study focused on the time-reduced sintering process of nanosilver film and power cycling reliab...
Next generation power modules empowered by wide bandgap semiconductors like SiC and GaN can operate ...
© 2014 Copyright © Taylor & Francis Group, LLC. The samples of sintered Ag joints for power die at...
The samples of sintered Ag joints for power die attachments were prepared using paste of Ag nanopart...
This study investigates the power cycling reliability of nanosilver sintered joints formed by a time...
Pressure-assisted sintering processes to attach power devices using wet nanosilver pastes with time ...
Pressure-assisted sintering processes to attach power devices using wet nanosilver pastes with time ...
13.5 mm × 13.5 mm sintered nano-silver attachments for power devices onto AlN substrates were prepar...
Nowadays, numerous power electronics application requires operation at high temperatures. In order t...
For decades soldering has been the technology of choice in die bonding. However, due to worldwide he...
Low-temperature joining with sintered silver is being developed as a lead-free, non-solder, die-atta...
\ua9 2019, Emerald Publishing Limited. Purpose: This study aims to develop a bimodal nano-silver pas...
An Ag-Al nanopaste for high temperature die attach applications on SiC power devices has been develo...