In this study, the authors examine some of the factors affecting the brightness and the beam quality of high-power tapered lasers. The large volume resonators required to achieve a high-power, high-brightness operation make the beam quality sensitive to carrier lensing and a multimode operation. These cause bleaching of the regions outside the ridge waveguide. The beam quality in the conventional and the distributed Bragg reflector tapered lasers is examined in the absence of the self-heating effects to investigate the effect of the carrier lensing effects. The influence of the front facet reflectivity and the taper angle on the beam quality is investigated. The beam quality was found to degrade with an increase in the front facet reflectiv...
In high-power, high-brightness laser diodes, beam filamentation is one of the main physical effects ...
High power, diffraction-limited semiconductor lasers are required for a wide range of applications s...
The spontaneous emission of a GaAs-based tapered laser diode emitting at lambda = 1060 nm was measur...
In this study, the authors examine some of the factors affecting the brightness and the beam quality...
Increasing the brightness of high-power diode lasers is one of the key topics in today's semiconduct...
The beam properties of tapered semiconductor optical amplifiers emitting at 1.57 μm are analyzed b...
Tapered high-brightness diode lasers are finding use in a variety of applications today. An increase...
Semiconductor lasers with high beam quality and high optical output power are very attractive for a ...
The development of high-power, high-brightness tapered diode lasers and laser amplifiers is reported...
During the last few years high power diode laser arrays have become well established for direct mate...
The main motivation behind this work was to answer the following question: what is the impact of uni...
Semiconductor lasers with high beam quality and high optical output power are very attractive for a ...
High-brightness laser diode technology is progressing rapidly in response to competitive and evolvin...
We demonstrate, for the first time, a monolithic integrated lens for wide aperture gain-guided taper...
High-brightness single laser diodes based on the widespread taper design have demonstrated output po...
In high-power, high-brightness laser diodes, beam filamentation is one of the main physical effects ...
High power, diffraction-limited semiconductor lasers are required for a wide range of applications s...
The spontaneous emission of a GaAs-based tapered laser diode emitting at lambda = 1060 nm was measur...
In this study, the authors examine some of the factors affecting the brightness and the beam quality...
Increasing the brightness of high-power diode lasers is one of the key topics in today's semiconduct...
The beam properties of tapered semiconductor optical amplifiers emitting at 1.57 μm are analyzed b...
Tapered high-brightness diode lasers are finding use in a variety of applications today. An increase...
Semiconductor lasers with high beam quality and high optical output power are very attractive for a ...
The development of high-power, high-brightness tapered diode lasers and laser amplifiers is reported...
During the last few years high power diode laser arrays have become well established for direct mate...
The main motivation behind this work was to answer the following question: what is the impact of uni...
Semiconductor lasers with high beam quality and high optical output power are very attractive for a ...
High-brightness laser diode technology is progressing rapidly in response to competitive and evolvin...
We demonstrate, for the first time, a monolithic integrated lens for wide aperture gain-guided taper...
High-brightness single laser diodes based on the widespread taper design have demonstrated output po...
In high-power, high-brightness laser diodes, beam filamentation is one of the main physical effects ...
High power, diffraction-limited semiconductor lasers are required for a wide range of applications s...
The spontaneous emission of a GaAs-based tapered laser diode emitting at lambda = 1060 nm was measur...