Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content
- Fay, Mike W.
- Han, Y.
- Brown, Paul D.
- Harrison, Ian
- Hilton, K.P.
- Munday, A.
- Wallis, D.
- Balmer, R.S.
- Uren, M.J.
- Martin, T.
DOIAbstract
The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface planarity and contact resistance isexamined. In particular, the presence of a detrimental low temperature Pt-Al reaction is identified. This is implicated in both the requirement for a higher Al:Ti ratio than is required for related AuPdAlTi contact schemes and through the degraded temperature dependent resistance behaviour of the annealed AuPtAlTi contacts
Add to ORKG