Light-emitting diodes (LEDs) have been widely used in many applications such as lighting, display, and automobile as well as medical and agricultural applications. Particularly, for full-color displays using LEDs, the efficiency droop under high temperature or high injection current is one of the important technical issues to be improved. Generally, the efficiency droop is classified into a decrease in efficiency with increasing temperature (T-droop) and with high driving current (J-droop). In blue and red LEDs using different semiconductor materials and structures, the T- and J-droops are expected to be different from each other, but have not yet been systematically investigated. In this study, the causes of the T-droop and J-droop of blue...
In this paper, different efficiency behaviors of blue LEDs fabricated on the conventional sapphire s...
In this study, wavelength-dependent efficiency droop phenomena in InGaN-based light-emitting diodes ...
We will report on a systematic analysis of above aspects carried out by means of numerical device si...
The efficiency droop in light-emitting diodes (LEDs) represents a gradual decrease of the internal q...
The efficiency droop behaviors of GaN-based green light-emitting diodes (LEDs) are studied as a func...
This tutorial paper focuses on the physical origin of thermal droop, i.e., the decrease in the lumin...
The effect of strongly-imbalanced carrier concentration and mobility on efficiency droop is studied ...
The temperature-dependent external quantum efficiencies (EQEs) were investigated for a 620 nm AlGaIn...
InGaN-based blue and green light-emitting diodes are studied by temperature-dependent electrolumines...
The efficiency decreases at high current, is a major problem to solid state lighting. This problem i...
Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current density perp...
Due to copyright restrictions, the access to the full text of this article is only available via sub...
Efficiency droop, i.e. the loss of efficiency at high operating current, afflicts nitride-based ligh...
At room temperature, AlGaInP pn-junction light-emitting diodes (LEDs) emitting at 630 nm do not exhi...
The physical properties of InGaN-based light emitting diodes (LEDs) and laser diodes (LDs) are inves...
In this paper, different efficiency behaviors of blue LEDs fabricated on the conventional sapphire s...
In this study, wavelength-dependent efficiency droop phenomena in InGaN-based light-emitting diodes ...
We will report on a systematic analysis of above aspects carried out by means of numerical device si...
The efficiency droop in light-emitting diodes (LEDs) represents a gradual decrease of the internal q...
The efficiency droop behaviors of GaN-based green light-emitting diodes (LEDs) are studied as a func...
This tutorial paper focuses on the physical origin of thermal droop, i.e., the decrease in the lumin...
The effect of strongly-imbalanced carrier concentration and mobility on efficiency droop is studied ...
The temperature-dependent external quantum efficiencies (EQEs) were investigated for a 620 nm AlGaIn...
InGaN-based blue and green light-emitting diodes are studied by temperature-dependent electrolumines...
The efficiency decreases at high current, is a major problem to solid state lighting. This problem i...
Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current density perp...
Due to copyright restrictions, the access to the full text of this article is only available via sub...
Efficiency droop, i.e. the loss of efficiency at high operating current, afflicts nitride-based ligh...
At room temperature, AlGaInP pn-junction light-emitting diodes (LEDs) emitting at 630 nm do not exhi...
The physical properties of InGaN-based light emitting diodes (LEDs) and laser diodes (LDs) are inves...
In this paper, different efficiency behaviors of blue LEDs fabricated on the conventional sapphire s...
In this study, wavelength-dependent efficiency droop phenomena in InGaN-based light-emitting diodes ...
We will report on a systematic analysis of above aspects carried out by means of numerical device si...