Activity dependent post-tetanic potentiation of starch-based biopolymer electrolyte gated oxide synaptic transistors

Recently, neuromorphic devices have attracted great attentions in the field of brain-inspired neuromorphic engineering. As an important form of short-term synaptic plasticity, post-tetanic potentiation (PTP) plays a crucial role in the formation of short-term memory in biological nervous system. Here, indium-tin-oxide synaptic transistors were proposed by using solution-processed starch-based biopolymer electrolytes as gate dielectrics, demonstrating good electrical performances at a low operation voltage of 1 V. Short-term plasticities were mimicked on the proposed oxide synaptic transistors. PTP behaviors were demonstrated on the synaptic devices. Furthermore, effects of prior history of synaptic activity on PTP responses have been discussed in detail. The proposed synaptic transistors may have potential applications in neuromorphic system