Analytical Model for the Inversion Gate Capacitance of DG and UTBB MOSFETs at the Quantum Capacitance Limit

Hiblot, Gaspard
Rafhay, Quentin
Boeuf, Frédéric
Ghibaudo, Gérard

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Publication date

May 2015

DOI

10.1109/TED.2015.2406116

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

ISSN

0018-9383

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Abstract

International audienceIn this paper, a model of gate capacitance is proposed for ultrathin-body-BOX and double-gate MOSFETs with light mass channel materials. First, the model is derived by making the assumption that only one subband is occupied and using quantum perturbation theory to compute the corresponding energy level. Next, this model is confirmed with Poisson-Schrödinger simulations. Finally, the impacts in terms of performance and scaling are discussed

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Analytical Model for the Inversion Gate Capacitance of DG and UTBB MOSFETs at the Quantum Capacitance Limit

Abstract

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Analytical Model for the Inversion Gate Capacitance of DG and UTBB MOSFETs at the Quantum Capacitance Limit

Abstract

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