This paper evaluates the benefits of replacing the Si diodes of a commercial IGBT module for the main inverter application of an electric vehicle with SiC diodes, leaving the other components of the package and the system unchanged. This will give a direct comparison of Si vs SiC diodes, without giving scope for discrepancies arising out of differences in the packaging, gate-driver circuit etc. The IGBT-module chosen for comparison is a low inductance (8nH) HybridPACK Drive module from Infineon, suitable for high speed switching. A loss model is developed for the modules, and the resulting model is used to investigate the performance for various drive cycles (Artemis, WLTP, NEDC). A calorimetric loss measurement setup is developed for exper...
This paper presents an integrated framework for modelling inverter performance and evaluating power ...
The device characteristics for the normally off SiC JFET are superior to MOSFETs and IGBTs and offer...
Silicon carbide (SiC) is seen as a potential replacement power semiconductor material because it ca...
This paper investigates the efficiency benefits of replacing the Silicon diodes of a commercial IGBT...
This work studies the lifetime of two silicon carbide (SiC) and one silicon insulated gate bipolar t...
This paper presents a comparison of power and energy losses for two silicon carbide (SiC) and one si...
This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for mot...
In this paper, a calorimetric method is presented to measure the total inverter power losses, for th...
The emergence of silicon carbide (SiC) semiconductors having superior properties when compared with ...
The emergence of silicon carbide (SiC) semiconductors having superior properties when compared with ...
One of the emerging research topics in the propulsion drive of the electric vehicles is the improvem...
One of the emerging research topics in the propulsion drive of the electric vehicles is the improvem...
Two insulated-gate bipolar-transistors (IGBTs) inverter leg modules of identical power rating have b...
This paper will demonstrate how the newer Silicon Carbide material semiconductor power devices can c...
The parallel connection of a Silicon (Si)-based IGBT and a Silicon Carbide (SiC)-based MOSFET formin...
This paper presents an integrated framework for modelling inverter performance and evaluating power ...
The device characteristics for the normally off SiC JFET are superior to MOSFETs and IGBTs and offer...
Silicon carbide (SiC) is seen as a potential replacement power semiconductor material because it ca...
This paper investigates the efficiency benefits of replacing the Silicon diodes of a commercial IGBT...
This work studies the lifetime of two silicon carbide (SiC) and one silicon insulated gate bipolar t...
This paper presents a comparison of power and energy losses for two silicon carbide (SiC) and one si...
This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for mot...
In this paper, a calorimetric method is presented to measure the total inverter power losses, for th...
The emergence of silicon carbide (SiC) semiconductors having superior properties when compared with ...
The emergence of silicon carbide (SiC) semiconductors having superior properties when compared with ...
One of the emerging research topics in the propulsion drive of the electric vehicles is the improvem...
One of the emerging research topics in the propulsion drive of the electric vehicles is the improvem...
Two insulated-gate bipolar-transistors (IGBTs) inverter leg modules of identical power rating have b...
This paper will demonstrate how the newer Silicon Carbide material semiconductor power devices can c...
The parallel connection of a Silicon (Si)-based IGBT and a Silicon Carbide (SiC)-based MOSFET formin...
This paper presents an integrated framework for modelling inverter performance and evaluating power ...
The device characteristics for the normally off SiC JFET are superior to MOSFETs and IGBTs and offer...
Silicon carbide (SiC) is seen as a potential replacement power semiconductor material because it ca...