Emerging photoluminescence from bilayer large-area 2D MoS2 films grown by pulsed laser deposition on different substrates

We report the growth of continuous large area bilayer films of MoS2 on different substrates by pulsed laser deposition (PLD). The growth parameters for PLD were modified in such a way that results in bilayer 2D-MoS2 films on both c-Al2O3 (0001) (sapphire) and SiO2/Si (SO) substrates. The bilayer large area crystalline nature of growth in the 2 H-phase is determined by Raman spectroscopy. Cross-sectional transmission electron microscopy confirms the distinct thinnest ordered layered structure of MoS2. Chemical analysis reveals an almost stoichiometric 2 H-phase on both the substrates. The photoluminescence intensities of both the films match very well with those of the corresponding exfoliated flakes, as well as chemical vapor deposited (CVD) films as reported in the literature. The in-situ post growth annealing with optimal film thickness acts as a solid phase epitaxy process which provides continuous crystalline layers with a smooth interface and regulates the photoluminescence properties. In contrast, the PLD grown MoS2 monolayer shows poor crystalline quality and non-uniform coverage compared to that with the exfoliated and CVD grown films