An electrically active defect has been observed at a level position of ∼ 0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ∼ 5×10−14 cm2 in epitaxial layers .
After low-energy electron irradiation of epitaxial n-type 4H-SiC, the DUES peak amplitudes. of the d...
We present a study of electrically active radiation-induced defects formed in 4H-SiC epitaxial layer...
The current status of SiC bulk growth is reviewed, while specific attention is given to the effect ...
An electrically active defect has been observed at a level position of ∼ 0.70 eV below the conductio...
We present a study of deep level defects created in isolated ion cascades produced in nitrogen-low-d...
Changing the ratio of carbon to silicon during the epitaxial 4H–SiC growth is expected to alter the ...
Please read abstract in the article.The University of Pretoria; Postdoctoral Fellowship Program of t...
Radiation damage produced in 4H–SiC n–epilayers by electrons of different energies is presented. Jun...
We report on the low-energy electron irradiated 4H-SiC material studied by means of deep-level trans...
Hydrogen is known to passivate donor and acceptor levels in SiC bulk, and also at the surface by for...
Schottky barrier radiation detectors were fabricated on n-type 4H-SiC epitaxial layers (12 – 50 μm) ...
Silicon carbide (SiC) has been discussed as a promising material for high power bipolar devices for ...
High-purity and low-doped n -type epitaxial layers of 4H-SiC have been implanted with N and C ions b...
We characterized intrinsic deep level defects created in ion collision cascades which were produced ...
4H-SiC je široko-pojasni poluvodič s izvrsnim električkim svojstvima za upotrebu pri visoko temperat...
After low-energy electron irradiation of epitaxial n-type 4H-SiC, the DUES peak amplitudes. of the d...
We present a study of electrically active radiation-induced defects formed in 4H-SiC epitaxial layer...
The current status of SiC bulk growth is reviewed, while specific attention is given to the effect ...
An electrically active defect has been observed at a level position of ∼ 0.70 eV below the conductio...
We present a study of deep level defects created in isolated ion cascades produced in nitrogen-low-d...
Changing the ratio of carbon to silicon during the epitaxial 4H–SiC growth is expected to alter the ...
Please read abstract in the article.The University of Pretoria; Postdoctoral Fellowship Program of t...
Radiation damage produced in 4H–SiC n–epilayers by electrons of different energies is presented. Jun...
We report on the low-energy electron irradiated 4H-SiC material studied by means of deep-level trans...
Hydrogen is known to passivate donor and acceptor levels in SiC bulk, and also at the surface by for...
Schottky barrier radiation detectors were fabricated on n-type 4H-SiC epitaxial layers (12 – 50 μm) ...
Silicon carbide (SiC) has been discussed as a promising material for high power bipolar devices for ...
High-purity and low-doped n -type epitaxial layers of 4H-SiC have been implanted with N and C ions b...
We characterized intrinsic deep level defects created in ion collision cascades which were produced ...
4H-SiC je široko-pojasni poluvodič s izvrsnim električkim svojstvima za upotrebu pri visoko temperat...
After low-energy electron irradiation of epitaxial n-type 4H-SiC, the DUES peak amplitudes. of the d...
We present a study of electrically active radiation-induced defects formed in 4H-SiC epitaxial layer...
The current status of SiC bulk growth is reviewed, while specific attention is given to the effect ...
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