In this paper we show that the orthorhombic phase of FeSi2 (stable at room temperature) displays a sizable anisotropy in the infrared spectra, with minor effects in the Raman data too. This fact is not trivial at all, since the crystal structure corresponds to a moderate distortion of the fluorite symmetry. Our analysis is carried out on small single crystals grown by flux transport, through polarization-resolved far-infrared reflectivity and Raman measurements. Their interpretation has been obtained by means of the simulated spectra with tight-binding molecular dynamics
AbstractWe measured the photoluminescence (PL), the optical absorption and the magneto-optical absor...
A comprehensive concentration and temperature dependent Raman spectroscopy study of Fe1-xCoxSi with ...
AbstractValence electronic structure of β-FeSi2 single crystal has been investigated by photoelectro...
In this paper we show that the orthorhombic phase of FeSi2 (stable at room temperature) displays a s...
In this paper we show that the orthorhombic phase of FeSi2 (stable at room temperature) displays a s...
We measured the reflectivity of a single crystal of FeSi from the far-infrared to the visible region...
From an investigation of the optical conductivity of FeSi single crystals using Fourier-transform in...
Polarized Raman spectra of a β-FeSi2(100)//Si(001) epitaxial film grown by molecular beam epitaxy we...
AbstractWe have investigated phonon properties of some β-FeSi2 crystals with characteristic light em...
The nature of the band gap in the semiconducting material beta-FeSi2 is still under some dispute. ...
This study deals with structural and optical properties of beta-FeSi(2) layers produced by direct io...
The lattice dynamics of FeSb2 is investigated by the first-principles DFT calculations and Raman spe...
In this paper are presented the far-infrared reflectivity spectra for a cleaved FeS 2 sample measure...
We measured the re ectivity of a single crystal of FeSi from the far-infrared to the visible region ...
beta-FeSi2 semiconductor thin films have been grown on Si(100) and Si(111) substrate at room tempera...
AbstractWe measured the photoluminescence (PL), the optical absorption and the magneto-optical absor...
A comprehensive concentration and temperature dependent Raman spectroscopy study of Fe1-xCoxSi with ...
AbstractValence electronic structure of β-FeSi2 single crystal has been investigated by photoelectro...
In this paper we show that the orthorhombic phase of FeSi2 (stable at room temperature) displays a s...
In this paper we show that the orthorhombic phase of FeSi2 (stable at room temperature) displays a s...
We measured the reflectivity of a single crystal of FeSi from the far-infrared to the visible region...
From an investigation of the optical conductivity of FeSi single crystals using Fourier-transform in...
Polarized Raman spectra of a β-FeSi2(100)//Si(001) epitaxial film grown by molecular beam epitaxy we...
AbstractWe have investigated phonon properties of some β-FeSi2 crystals with characteristic light em...
The nature of the band gap in the semiconducting material beta-FeSi2 is still under some dispute. ...
This study deals with structural and optical properties of beta-FeSi(2) layers produced by direct io...
The lattice dynamics of FeSb2 is investigated by the first-principles DFT calculations and Raman spe...
In this paper are presented the far-infrared reflectivity spectra for a cleaved FeS 2 sample measure...
We measured the re ectivity of a single crystal of FeSi from the far-infrared to the visible region ...
beta-FeSi2 semiconductor thin films have been grown on Si(100) and Si(111) substrate at room tempera...
AbstractWe measured the photoluminescence (PL), the optical absorption and the magneto-optical absor...
A comprehensive concentration and temperature dependent Raman spectroscopy study of Fe1-xCoxSi with ...
AbstractValence electronic structure of β-FeSi2 single crystal has been investigated by photoelectro...