Chemisorption of group-III metal adatoms on Si(111) and Ge(111) has been studied through the ab initio Hartree-Fock method including nonempirical pseudopotentials and using cluster models to simulate the surface. Three different high-symmetry sites (atop, eclipsed, and open) have been considered by using X4H9, X4H7, and X6H9 (X=Si,Ge) cluster models. In a first step, ideal surface geometries have been used. Metal-induced reconstruction upon chemisorption has also been taken into account. Equilibrium distances, binding energies, and vibrational frequencies have been obtained and compared with available experimental data. From binding-energy considerations, the atop and eclipsed sites seem to be the most favorable ones and thus a coadsorption...
Metal adsorbates on semiconductor surfaces have been widely studied over the last few decades. The m...
Cluster model calculations on germanium adsorption onto the Si(111)-7×7 surface are performed with t...
17th International Vacuum Congress/13th International Conference on Surface Science/International Co...
Chemisorption of group-III metal adatoms on Si(111) and Ge(111) has been studied through the ab init...
The interaction of atomic F and Cl with Si4H9 and Ge4H9 cluster models has been studied by using ab ...
The interaction of atomic F and Cl with Si4H9 and Ge4H9 cluster models has been studied by using ab ...
The interaction of atomic F and Cl with Si4H9 and Ge4H9 cluster models has been studied by using ab ...
Interaction models of atomic Al with Si4H9, Si4H7, and Si6H9 clusters have been studied to simulate ...
Interaction models of atomic Al with Si4H9, Si4H7, and Si6H9 clusters have been studied to simulate ...
We have studied the surface reconstructions of the In/Ge(111) system by means of scanning tunneling ...
Using ab initio generalized valence bond (GVB) and configuration interaction (CI) methods with clus...
Using ab initio generalized valence bond (GVB) and configuration interaction (CI) methods with clus...
*Çakmak, M. ( Aksaray, Yazar )We have examined the Si(111) surface with 1/3 monolayer of group-IV el...
Cluster model calculations on germanium adsorption onto the Si(111)-7×7 surface are performed with t...
Metal adsorbates on semiconductor surfaces have been widely studied over the last few decades. The m...
Metal adsorbates on semiconductor surfaces have been widely studied over the last few decades. The m...
Cluster model calculations on germanium adsorption onto the Si(111)-7×7 surface are performed with t...
17th International Vacuum Congress/13th International Conference on Surface Science/International Co...
Chemisorption of group-III metal adatoms on Si(111) and Ge(111) has been studied through the ab init...
The interaction of atomic F and Cl with Si4H9 and Ge4H9 cluster models has been studied by using ab ...
The interaction of atomic F and Cl with Si4H9 and Ge4H9 cluster models has been studied by using ab ...
The interaction of atomic F and Cl with Si4H9 and Ge4H9 cluster models has been studied by using ab ...
Interaction models of atomic Al with Si4H9, Si4H7, and Si6H9 clusters have been studied to simulate ...
Interaction models of atomic Al with Si4H9, Si4H7, and Si6H9 clusters have been studied to simulate ...
We have studied the surface reconstructions of the In/Ge(111) system by means of scanning tunneling ...
Using ab initio generalized valence bond (GVB) and configuration interaction (CI) methods with clus...
Using ab initio generalized valence bond (GVB) and configuration interaction (CI) methods with clus...
*Çakmak, M. ( Aksaray, Yazar )We have examined the Si(111) surface with 1/3 monolayer of group-IV el...
Cluster model calculations on germanium adsorption onto the Si(111)-7×7 surface are performed with t...
Metal adsorbates on semiconductor surfaces have been widely studied over the last few decades. The m...
Metal adsorbates on semiconductor surfaces have been widely studied over the last few decades. The m...
Cluster model calculations on germanium adsorption onto the Si(111)-7×7 surface are performed with t...
17th International Vacuum Congress/13th International Conference on Surface Science/International Co...