Shift of the DX level in narrow Si delta-doped GaAs

Fermi-edge singularity and screening effects in the absorption and luminescence spectrum of Si delta-doped GaAs.

Fischer, A.
Ploog, K.
Wagner, J.

January 1991

We have investigated single Si delta-doped layers in GaAs by photoluminescence and photoluminescence...

DETERMINATION OF THE SUBBAND ENERGY IN THE V-SHAPED POTENTIAL WELL OF DELTA-DOPED GAAS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

ZHU QS
ZHONG ZT
LU LW
LI CF
ZHU QS ACAD SINICAINST SEMICONDPOB 912BEIJING 100083PEOPLES R CHINA

January 1994

Using deep level transient spectroscopy (DLTS) the conduction-subband energy levels in a V-shaped po...

Hot Electrons In Delta-doped Gaas(si) Layers

Mendonca C.A.C.
Scolfaro L.M.R.
Plentz F.
Meneses E.A.
Oliveira Jr. A.T.
Rodrigues R.
Guimaraes P.S.S.
Bezerra J.C.
Dias I.F.L.
Oliveira A.G.

November 2015

Low temperature (2K) photoluminescence measurements have been performed in delta-doped GaAs(Si) laye...

Electron mobility in Si delta doped GaAs

Koenraad, P.M.
Stadt, A.F.W. van de
Shi, J.M.
Hai, G.Q.
Studart, N.
Vansant, P.
Peeters, F.M.
Devreese, J.T.
Perenboom, J.A.A.J.
Wolter, J.H.

January 1995

Contains fulltext : 29766.pdf (publisher's version ) (Open Access

Shift of the DX level in narrow silicon delta-doped gallium arsenide

Koenraad, P.M.
Lange, de, W.
Blom, F.A.P.
Leijs, M.R.
Perenboom, J.A.A.J.
Singleton, J.
Wolter, J.H.

January 1991

The authors present measurements under hydrostatic pressure on Si delta-doped GaAs. From the measure...

Electronic subbands of a delta-doping layer in GaAs in a parallel magnetic-field

Zrenner, A.
Reisinger, H.
Koch, F.
Ploog, K.
Maan, J.C.

January 1986

Contains fulltext : 145276.pdf (publisher's version ) (Open Access

Observation of high mobility and cyclotron resonance in 20 Å silicon delta-doped GaAs grown by MBE at 480 °C

Koenraad, P.M.
Blom, F.A.P.
Langerak, C.J.G.M.
Leys, M.R.
Perenboom, J.A.A.J.
Singleton, J.
Spermon, S.J.R.M.
Vleuten, W.C. van der
Voncken, A.P.J.
Wolter, J.H.

January 1990

Contains fulltext : 112831.pdf (publisher's version ) (Open Access

Structural analysis and physical characterisation of DX centres and line defects in GaAs

Wel, P.J. van der

January 1993

Contains fulltext : mmubn000001_157043614.pdf (publisher's version ) (Open Access)...

Comparison of Si delta-doping with homogenous doping in GaAs.

Köhler, K.
Ganser, P.
Maier, M.

January 1993

Homogeneous and Delta-doped GaAs:Si, has been grown by moleclar beam epitaxy at growth temperatures ...

Photoluminescence study of silicon delta-doped gallium arsenide

Henning, J.C.M.
Kessener, Y.A.R.R.
Koenraad, P.M.
Leijs, M.R.
Vleuten, van der, W.C.
Wolter, J.H.
Frens, A.M.

January 1991

A photoluminescence (PL) study is made of (001) oriented GaAs samples containing a single delta dopi...

SI-DOPING OF MOCVD GAAS - CLOSER ANALYSIS OF THE INCORPORATION PROCESS

Tang, X.
Lochs, H.G.M.
Hageman, P.R.
Decroon, M.H.J.M.
Giling, L.J.
Bons, A.J.

January 1989

Contains fulltext : 112594.pdf (publisher's version ) (Open Access

Luminescence of a delta doping related exciton in GaAs:Si

Henning, J.C.M.
Kessener, Y.A.R.R.
Koenraad, P.M.
Leijs, M.R.
Vleuten, van der, W.C.
Wolter, J.H.
Frens, A.M.

January 1994

Photoluminescence spectra of Si d-doped GaAs show a sharp future at 1.4977 eV with phonon replicas (...

Electronic properties of dilute #delta#-doping layers in GaAs and investigation of the Si-SiO_2 interface using a stress-degradation-anneal cycle

Qui-Yi Ye

January 1989

SIGLETIB Hannover: DR 6868 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische Information...

CRITICAL LAYER THICKNESS OF MOVPE-GROWN GAAS ON INXGA1-XAS

Tenijenhuis, J.
Vanderwel, P.J.
Vanasten, R.W.F.
Hageman, P.R.
Giling, L.J.

January 1991

Contains fulltext : 112593.pdf (publisher's version ) (Open Access

Broadening Of The Si Doping Layer In Planar-doped Gaas In The Limit Of High Concentrations

Rodrigues R.
Guimaraes P.S.S.
Sampaio J.F.
Nogueira R.A.
Oliveira Jr. A.T.
Dias I.F.
Bezerra J.C.
de Oliveira A.G.
Chaves A.S.
Scolfaro L.M.R.

November 2015

A series of samples of GaAs planar doped with Si, grown by MBE at low substrate temperatures and wit...

Fermi-edge singularity and screening effects in the absorption and luminescence spectrum of Si delta-doped GaAs.

Fischer, A.
Ploog, K.
Wagner, J.

January 1991

We have investigated single Si delta-doped layers in GaAs by photoluminescence and photoluminescence...

DETERMINATION OF THE SUBBAND ENERGY IN THE V-SHAPED POTENTIAL WELL OF DELTA-DOPED GAAS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

ZHU QS
ZHONG ZT
LU LW
LI CF
ZHU QS ACAD SINICAINST SEMICONDPOB 912BEIJING 100083PEOPLES R CHINA

January 1994

Using deep level transient spectroscopy (DLTS) the conduction-subband energy levels in a V-shaped po...

Hot Electrons In Delta-doped Gaas(si) Layers

Mendonca C.A.C.
Scolfaro L.M.R.
Plentz F.
Meneses E.A.
Oliveira Jr. A.T.
Rodrigues R.
Guimaraes P.S.S.
Bezerra J.C.
Dias I.F.L.
Oliveira A.G.

November 2015

Low temperature (2K) photoluminescence measurements have been performed in delta-doped GaAs(Si) laye...

Electron mobility in Si delta doped GaAs

Koenraad, P.M.
Stadt, A.F.W. van de
Shi, J.M.
Hai, G.Q.
Studart, N.
Vansant, P.
Peeters, F.M.
Devreese, J.T.
Perenboom, J.A.A.J.
Wolter, J.H.

January 1995

Contains fulltext : 29766.pdf (publisher's version ) (Open Access

Shift of the DX level in narrow silicon delta-doped gallium arsenide

Koenraad, P.M.
Lange, de, W.
Blom, F.A.P.
Leijs, M.R.
Perenboom, J.A.A.J.
Singleton, J.
Wolter, J.H.

January 1991

The authors present measurements under hydrostatic pressure on Si delta-doped GaAs. From the measure...

Electronic subbands of a delta-doping layer in GaAs in a parallel magnetic-field

Zrenner, A.
Reisinger, H.
Koch, F.
Ploog, K.
Maan, J.C.

January 1986

Contains fulltext : 145276.pdf (publisher's version ) (Open Access

Observation of high mobility and cyclotron resonance in 20 Å silicon delta-doped GaAs grown by MBE at 480 °C

Koenraad, P.M.
Blom, F.A.P.
Langerak, C.J.G.M.
Leys, M.R.
Perenboom, J.A.A.J.
Singleton, J.
Spermon, S.J.R.M.
Vleuten, W.C. van der
Voncken, A.P.J.
Wolter, J.H.

January 1990

Contains fulltext : 112831.pdf (publisher's version ) (Open Access

Structural analysis and physical characterisation of DX centres and line defects in GaAs

Wel, P.J. van der

January 1993

Contains fulltext : mmubn000001_157043614.pdf (publisher's version ) (Open Access)...

Comparison of Si delta-doping with homogenous doping in GaAs.

Köhler, K.
Ganser, P.
Maier, M.

January 1993

Homogeneous and Delta-doped GaAs:Si, has been grown by moleclar beam epitaxy at growth temperatures ...

Photoluminescence study of silicon delta-doped gallium arsenide

Henning, J.C.M.
Kessener, Y.A.R.R.
Koenraad, P.M.
Leijs, M.R.
Vleuten, van der, W.C.
Wolter, J.H.
Frens, A.M.

January 1991

A photoluminescence (PL) study is made of (001) oriented GaAs samples containing a single delta dopi...

SI-DOPING OF MOCVD GAAS - CLOSER ANALYSIS OF THE INCORPORATION PROCESS

Tang, X.
Lochs, H.G.M.
Hageman, P.R.
Decroon, M.H.J.M.
Giling, L.J.
Bons, A.J.

January 1989

Contains fulltext : 112594.pdf (publisher's version ) (Open Access

Luminescence of a delta doping related exciton in GaAs:Si

Henning, J.C.M.
Kessener, Y.A.R.R.
Koenraad, P.M.
Leijs, M.R.
Vleuten, van der, W.C.
Wolter, J.H.
Frens, A.M.

January 1994

Photoluminescence spectra of Si d-doped GaAs show a sharp future at 1.4977 eV with phonon replicas (...

Electronic properties of dilute #delta#-doping layers in GaAs and investigation of the Si-SiO_2 interface using a stress-degradation-anneal cycle

Qui-Yi Ye

January 1989

SIGLETIB Hannover: DR 6868 / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Technische Information...

CRITICAL LAYER THICKNESS OF MOVPE-GROWN GAAS ON INXGA1-XAS

Tenijenhuis, J.
Vanderwel, P.J.
Vanasten, R.W.F.
Hageman, P.R.
Giling, L.J.

January 1991

Contains fulltext : 112593.pdf (publisher's version ) (Open Access

Broadening Of The Si Doping Layer In Planar-doped Gaas In The Limit Of High Concentrations

Rodrigues R.
Guimaraes P.S.S.
Sampaio J.F.
Nogueira R.A.
Oliveira Jr. A.T.
Dias I.F.
Bezerra J.C.
de Oliveira A.G.
Chaves A.S.
Scolfaro L.M.R.

November 2015

A series of samples of GaAs planar doped with Si, grown by MBE at low substrate temperatures and wit...

Fermi-edge singularity and screening effects in the absorption and luminescence spectrum of Si delta-doped GaAs.

Fischer, A.
Ploog, K.
Wagner, J.

January 1991

We have investigated single Si delta-doped layers in GaAs by photoluminescence and photoluminescence...

DETERMINATION OF THE SUBBAND ENERGY IN THE V-SHAPED POTENTIAL WELL OF DELTA-DOPED GAAS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

ZHU QS
ZHONG ZT
LU LW
LI CF
ZHU QS ACAD SINICAINST SEMICONDPOB 912BEIJING 100083PEOPLES R CHINA

January 1994

Using deep level transient spectroscopy (DLTS) the conduction-subband energy levels in a V-shaped po...

Hot Electrons In Delta-doped Gaas(si) Layers

Mendonca C.A.C.
Scolfaro L.M.R.
Plentz F.
Meneses E.A.
Oliveira Jr. A.T.
Rodrigues R.
Guimaraes P.S.S.
Bezerra J.C.
Dias I.F.L.
Oliveira A.G.

November 2015

Low temperature (2K) photoluminescence measurements have been performed in delta-doped GaAs(Si) laye...

Shift of the DX level in narrow Si delta-doped GaAs

Abstract

Extracted data

Shift of the DX level in narrow Si delta-doped GaAs

Abstract

Extracted data

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