Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates

Depth dependence of the tetragonal distortion of a GaN layer on Si(111) studied by Rutherford backscattering/channeling

Wu, MF
Chen, CC
Zhu, DZ
Zhou, SQ
Vantomme, A
Langouche, G
Zhang, BS
Yang, H

January 2002

Rutherford backscattering and channeling have been used to characterize the structure of a GaN layer...

Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates

Schenk, David
Bavard, Alexis
Frayssinet, Eric
Song, Xi
Cayrel, Frédéric
Ghouli, Hassan
Lijadi, Melania
Naïm, Laurent
Kennard, Mark
Cordier, Yvon
Rondi, Daniel
Alquier, Daniel

January 2012

International audienceWe report on silicon n-type delta (δ)-doping of gallium nitride (GaN) epitaxia...

Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition

Ozturk, M. K.
Arslan, E.
Kars, I.
Ozcelik, S.
Ozbay, E.

February 2013

Cataloged from PDF version of article.The strain analysis of GaN film on nitridated Si(111) substrat...

Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (1 1 1) substrates

Haffouz, S.
Grzegorczyk, A.
Hageman, P.R.
Vennegues, P.
Drift, van der, E.W.J.M.
Larsen, P.K.

January 2003

We report on the maskless epitaxial lateral overgrowth of GaN on structured Si (1 1 1) substrates an...

Mask-less epitaxial lateral overgrown MOVPE GaN layers on Si (111) substrates

Haffouz, S.
Grzegorczyk, A.
Hageman, P.R.
Larsen, P.K.
Vennegues, P.
Drift, van der, E.W.J.M.
Visser, D., Taco
Lenstra, Daan
Schouten, F., Hugo

January 2002

We report on the mask-less Epitaxial Lateral Overgrowth (ELO) of GaN on structured Si (111) substrat...

Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)

Weyher, J.L.
Brown, P.D.
Zauner, A.R.A.
Muller, S.
Boothroyd, C.B.
Foord, D.T.
Hageman, P.R.
Humphreys, C.J.
Larsen, P.K.
Grzegory, I.
Porowski, S.

January 1999

Contains fulltext : 112571.pdf (publisher's version ) (Closed access

MOCVD growth of high quality crack-free GaN on Si(III) substrates

Zhang BS
Zhu JJ
Wang YT
Yang H
Zhang BS Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.

January 2003

High quality crack free GaN epilayers were grown on Si(111) substrates. Low temperature AlN interlay...

Structure and strain studies of GaN epilayer with LT-AlN interlayer

Hou, Li-Na
Yao, Shu-De
Zhou, Sheng-Qiang
Zhao, Qiang
Wang, Kun
Ding, Zhi-Bo
Wang, Jian-Feng

January 2006

A hexagonal GaN layer with a LT-AlN (low temperature) interlayer grown on Si(111) by metallorganic c...

Optical properties of GaN grown on Si(111) substrates by MOCVD

Zhang BS
Wang JF
Wang Y
Zhu JJ
Yang H
Zhang, BS, Changchun Univ Sci & Technol, Natl Key Lab High Power Semicond Laser, Changchun 130022, Peoples R China. 电子邮箱地址: baoshunzhang@126.com

January 2005

GaN epilayers were grown on Si (111) substrates by MOCVD. The optical properties of the samples unde...

EPITAXIAL LATERAL OVERGROWTH OF GaN ON SILICON-ON-INSULATOR

Zhang B
Chen J
Wang X
Wu AM
Luo JX
Zhang MA
Wu YX
Zhu JJ
Yang H
Zhang B Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China. E-mail Address: bozhang@mail.sim.ac.cn

January 2009

From a single process, GaN layers were laterally overgrown on maskless stripe-patterned (111) silico...

The growth morphologies of GaN layer on Si(111) substrate

Lu YA
Liu XL
Lu DC
Yuan HR
Hu GQ
Wang XH
Wang ZG
Duan XF
Lu DC,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.

January 2003

The growth morphologies of metalorganic chemical vapor deposition (MOCVD) grown GaN layer on Si(111)...

Influence of the substrate misorientation of 4H-SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers by MOCVD

Rudzinski, M.
Hageman, P.R.
Grzegorczyk, A.P.
Macht, L.J.
Rodle, T.C.
Jos, H.F.F.
Larsen, P.K.

January 2005

Contains fulltext : 32640.pdf (publisher's version ) (Closed access)4 p

GaN growth on sapphire by MOCVD - Material for HEMT structures

Grzegorczyk, A.P.

January 2006

Contains fulltext : 27418.pdf (publisher's version ) (Open Access)This thesis focu...

Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth

Zang, K.Y.
Chua, S.J.

January 2008

10.1002/pssc.200778509Physica Status Solidi (C) Current Topics in Solid State Physics561585-158

Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD

Luo WJ
Wang XL
Guo LC
Mao HL
Wang CM
Ran JX
Li JP
Li JM
Luo WJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: luoweijun@mail.semi.ac.cn

January 2008

The effect of thickness of the high-temperature (HT) AlN buffer layer on the properties of GaN grown...

Depth dependence of the tetragonal distortion of a GaN layer on Si(111) studied by Rutherford backscattering/channeling

Wu, MF
Chen, CC
Zhu, DZ
Zhou, SQ
Vantomme, A
Langouche, G
Zhang, BS
Yang, H

January 2002

Rutherford backscattering and channeling have been used to characterize the structure of a GaN layer...

Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates

Schenk, David
Bavard, Alexis
Frayssinet, Eric
Song, Xi
Cayrel, Frédéric
Ghouli, Hassan
Lijadi, Melania
Naïm, Laurent
Kennard, Mark
Cordier, Yvon
Rondi, Daniel
Alquier, Daniel

January 2012

International audienceWe report on silicon n-type delta (δ)-doping of gallium nitride (GaN) epitaxia...

Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition

Ozturk, M. K.
Arslan, E.
Kars, I.
Ozcelik, S.
Ozbay, E.

February 2013

Cataloged from PDF version of article.The strain analysis of GaN film on nitridated Si(111) substrat...

Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (1 1 1) substrates

Haffouz, S.
Grzegorczyk, A.
Hageman, P.R.
Vennegues, P.
Drift, van der, E.W.J.M.
Larsen, P.K.

January 2003

We report on the maskless epitaxial lateral overgrowth of GaN on structured Si (1 1 1) substrates an...

Mask-less epitaxial lateral overgrown MOVPE GaN layers on Si (111) substrates

Haffouz, S.
Grzegorczyk, A.
Hageman, P.R.
Larsen, P.K.
Vennegues, P.
Drift, van der, E.W.J.M.
Visser, D., Taco
Lenstra, Daan
Schouten, F., Hugo

January 2002

We report on the mask-less Epitaxial Lateral Overgrowth (ELO) of GaN on structured Si (111) substrat...

Morphological and structural characteristics of homoepitaxial GaN grown by metalorganic chemical vapour deposition (MOCVD)

Weyher, J.L.
Brown, P.D.
Zauner, A.R.A.
Muller, S.
Boothroyd, C.B.
Foord, D.T.
Hageman, P.R.
Humphreys, C.J.
Larsen, P.K.
Grzegory, I.
Porowski, S.

January 1999

Contains fulltext : 112571.pdf (publisher's version ) (Closed access

MOCVD growth of high quality crack-free GaN on Si(III) substrates

Zhang BS
Zhu JJ
Wang YT
Yang H
Zhang BS Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.

January 2003

High quality crack free GaN epilayers were grown on Si(111) substrates. Low temperature AlN interlay...

Structure and strain studies of GaN epilayer with LT-AlN interlayer

Hou, Li-Na
Yao, Shu-De
Zhou, Sheng-Qiang
Zhao, Qiang
Wang, Kun
Ding, Zhi-Bo
Wang, Jian-Feng

January 2006

A hexagonal GaN layer with a LT-AlN (low temperature) interlayer grown on Si(111) by metallorganic c...

Optical properties of GaN grown on Si(111) substrates by MOCVD

Zhang BS
Wang JF
Wang Y
Zhu JJ
Yang H
Zhang, BS, Changchun Univ Sci & Technol, Natl Key Lab High Power Semicond Laser, Changchun 130022, Peoples R China. 电子邮箱地址: baoshunzhang@126.com

January 2005

GaN epilayers were grown on Si (111) substrates by MOCVD. The optical properties of the samples unde...

EPITAXIAL LATERAL OVERGROWTH OF GaN ON SILICON-ON-INSULATOR

Zhang B
Chen J
Wang X
Wu AM
Luo JX
Zhang MA
Wu YX
Zhu JJ
Yang H
Zhang B Chinese Acad Sci Shanghai Inst Microsyst & Informat Technol State Key Lab Funct Mat Informat Shanghai 200050 Peoples R China. E-mail Address: bozhang@mail.sim.ac.cn

January 2009

From a single process, GaN layers were laterally overgrown on maskless stripe-patterned (111) silico...

The growth morphologies of GaN layer on Si(111) substrate

Lu YA
Liu XL
Lu DC
Yuan HR
Hu GQ
Wang XH
Wang ZG
Duan XF
Lu DC,Chinese Acad Sci,Inst Semicond,Key Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China.

January 2003

The growth morphologies of metalorganic chemical vapor deposition (MOCVD) grown GaN layer on Si(111)...

Influence of the substrate misorientation of 4H-SiC substrates on the morphology and crack formation in hetero epitaxial MOCVD grown GaN epilayers by MOCVD

Rudzinski, M.
Hageman, P.R.
Grzegorczyk, A.P.
Macht, L.J.
Rodle, T.C.
Jos, H.F.F.
Larsen, P.K.

January 2005

Contains fulltext : 32640.pdf (publisher's version ) (Closed access)4 p

GaN growth on sapphire by MOCVD - Material for HEMT structures

Grzegorczyk, A.P.

January 2006

Contains fulltext : 27418.pdf (publisher's version ) (Open Access)This thesis focu...

Orders of magnitude reduction in dislocation density in GaN grown on Si (111) by nano lateral epitaxial overgrowth

Zang, K.Y.
Chua, S.J.

January 2008

10.1002/pssc.200778509Physica Status Solidi (C) Current Topics in Solid State Physics561585-158

Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(111) by MOCVD

Luo WJ
Wang XL
Guo LC
Mao HL
Wang CM
Ran JX
Li JP
Li JM
Luo WJ Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: luoweijun@mail.semi.ac.cn

January 2008

The effect of thickness of the high-temperature (HT) AlN buffer layer on the properties of GaN grown...

Depth dependence of the tetragonal distortion of a GaN layer on Si(111) studied by Rutherford backscattering/channeling

Wu, MF
Chen, CC
Zhu, DZ
Zhou, SQ
Vantomme, A
Langouche, G
Zhang, BS
Yang, H

January 2002

Rutherford backscattering and channeling have been used to characterize the structure of a GaN layer...

Delta-Doping of Epitaxial GaN Layers on Large Diameter Si(111) Substrates

Schenk, David
Bavard, Alexis
Frayssinet, Eric
Song, Xi
Cayrel, Frédéric
Ghouli, Hassan
Lijadi, Melania
Naïm, Laurent
Kennard, Mark
Cordier, Yvon
Rondi, Daniel
Alquier, Daniel

January 2012

International audienceWe report on silicon n-type delta (δ)-doping of gallium nitride (GaN) epitaxia...

Strain analysis of the GaN epitaxial layers grown on nitridated Si(111) substrate by metal organic chemical vapor deposition

Ozturk, M. K.
Arslan, E.
Kars, I.
Ozcelik, S.
Ozbay, E.

February 2013

Cataloged from PDF version of article.The strain analysis of GaN film on nitridated Si(111) substrat...

Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates

Abstract

Extracted data

Structural properties of maskless epitaxial lateral overgrown MOCVD GaN layers on Si (111) substrates

Abstract

Extracted data

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