Contains fulltext : 112521.pdf (publisher's version ) (Open Access
We report room temperature stimulated emission from as-grown GaN hexagons by selective area growth h...
Optically-active defects of undoped GaN epilayers grown on sapphire by metalorganic chemical vapor e...
The properties of semi-insulating thick films of Zn-doped GaN grown by hydride vapor phase epitaxy h...
Contains fulltext : 60520.pdf (publisher's version ) (Closed access
Luminescence degradation of hydride vapor-phase epitaxy-grown GaN wafers under electron-beam (e-beam...
We investigated the optical properties of a series of GaN samples sliced from the same bulk crystal ...
We report on photoluminescence and optical gain measurements of highly excited GaN crystals grown by...
A dramatic change is observed in the photoluminescence spectrum of a GaN sample after annealing at a...
Hydride vapor phase epitaxy (HVPE) is used for the growth of low-defect GaN. We have grown undoped f...
Contains fulltext : 76556.pdf (publisher's version ) (Open Access)Chemical vapor d...
We report characterization of the red emission band in hydride vapor phase epitaxial GaN using catho...
A luminescence band centered around 3.42 eV is commonly observed in GaN. Its appearance has been ten...
Contains fulltext : 33011.pdf (publisher's version ) (Open Access
Luminescence evolution of GaN irradiated by low energy electron beam before and after hydrogenation ...
We have investigated point defects in GaN grown by HVPE by using steady-state and time-resolved phot...
We report room temperature stimulated emission from as-grown GaN hexagons by selective area growth h...
Optically-active defects of undoped GaN epilayers grown on sapphire by metalorganic chemical vapor e...
The properties of semi-insulating thick films of Zn-doped GaN grown by hydride vapor phase epitaxy h...
Contains fulltext : 60520.pdf (publisher's version ) (Closed access
Luminescence degradation of hydride vapor-phase epitaxy-grown GaN wafers under electron-beam (e-beam...
We investigated the optical properties of a series of GaN samples sliced from the same bulk crystal ...
We report on photoluminescence and optical gain measurements of highly excited GaN crystals grown by...
A dramatic change is observed in the photoluminescence spectrum of a GaN sample after annealing at a...
Hydride vapor phase epitaxy (HVPE) is used for the growth of low-defect GaN. We have grown undoped f...
Contains fulltext : 76556.pdf (publisher's version ) (Open Access)Chemical vapor d...
We report characterization of the red emission band in hydride vapor phase epitaxial GaN using catho...
A luminescence band centered around 3.42 eV is commonly observed in GaN. Its appearance has been ten...
Contains fulltext : 33011.pdf (publisher's version ) (Open Access
Luminescence evolution of GaN irradiated by low energy electron beam before and after hydrogenation ...
We have investigated point defects in GaN grown by HVPE by using steady-state and time-resolved phot...
We report room temperature stimulated emission from as-grown GaN hexagons by selective area growth h...
Optically-active defects of undoped GaN epilayers grown on sapphire by metalorganic chemical vapor e...
The properties of semi-insulating thick films of Zn-doped GaN grown by hydride vapor phase epitaxy h...
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