Polycrystalline tellurium becomes amorphous after irradiation with strong femtosecond pulses. The amorphization is sensitive to the initial temperature but not very sensitive to the temporal profile of the optical excitation. Above the amorphization threshold, single-shot transient reflectivity traces show clear coherent phonon oscillations within 1 ps. These results suggest that amorphization is due to thermal melting rather than nonthermal melting or switching for pump fluences up to the ablation threshold.National Science Foundation (U.S.) (Grant 1665383)United States. Office of Naval Research (Grant N00014-12-1-0530
The success in the fabrication of micro-structures in glassy materials using femtosecond laser irrad...
In this paper, we have studied the crystallization behavior of amorphous GST225 thin films upon irra...
We have observed an irreversible ultrafast crystalline-to-amorphous phase transition in Ge2Sb2Te5cha...
Crystalline tellurium undergoes amorphization after irradiation with strong femtosecond pulses. Stea...
Crystalline tellurium undergoes amorphization after irradiation with strong femtosecond pulses. Stea...
Crystalline tellurium undergoes amorphization after irradiation with strong femtosecond pulses. Stea...
Crystalline tellurium undergoes amorphization after irradiation with strong femtosecond pulses. Stea...
Crystalline tellurium undergoes amorphization after irradiation with strong femtosecond pulses. Stea...
We investigate the dynamics of coherent optical phonons in tellurium after high-density excitation w...
Structural study of Al2O3-Na2O-CaO-P2O5 bioactive glasses as a function of aluminium content J. Chem...
The phase transition dynamics of amorphous Ag8In14Sb55Te23 (AIST) thin films induced by single nanos...
Films of 260 nm thickness, with atomic composition Ta_(42)Si_(13)N_(45), on 4" silicon wafers, have...
Copyright © 2012 American Institute of PhysicsThe phase transition between the amorphous and crystal...
Films of 260 nm thickness, with atomic composition Ta_(42)Si_(13)N_(45), on 4" silicon wafers, have...
Films of 260 nm thickness, with atomic composition Ta_(42)Si_(13)N_(45), on 4" silicon wafers, have...
The success in the fabrication of micro-structures in glassy materials using femtosecond laser irrad...
In this paper, we have studied the crystallization behavior of amorphous GST225 thin films upon irra...
We have observed an irreversible ultrafast crystalline-to-amorphous phase transition in Ge2Sb2Te5cha...
Crystalline tellurium undergoes amorphization after irradiation with strong femtosecond pulses. Stea...
Crystalline tellurium undergoes amorphization after irradiation with strong femtosecond pulses. Stea...
Crystalline tellurium undergoes amorphization after irradiation with strong femtosecond pulses. Stea...
Crystalline tellurium undergoes amorphization after irradiation with strong femtosecond pulses. Stea...
Crystalline tellurium undergoes amorphization after irradiation with strong femtosecond pulses. Stea...
We investigate the dynamics of coherent optical phonons in tellurium after high-density excitation w...
Structural study of Al2O3-Na2O-CaO-P2O5 bioactive glasses as a function of aluminium content J. Chem...
The phase transition dynamics of amorphous Ag8In14Sb55Te23 (AIST) thin films induced by single nanos...
Films of 260 nm thickness, with atomic composition Ta_(42)Si_(13)N_(45), on 4" silicon wafers, have...
Copyright © 2012 American Institute of PhysicsThe phase transition between the amorphous and crystal...
Films of 260 nm thickness, with atomic composition Ta_(42)Si_(13)N_(45), on 4" silicon wafers, have...
Films of 260 nm thickness, with atomic composition Ta_(42)Si_(13)N_(45), on 4" silicon wafers, have...
The success in the fabrication of micro-structures in glassy materials using femtosecond laser irrad...
In this paper, we have studied the crystallization behavior of amorphous GST225 thin films upon irra...
We have observed an irreversible ultrafast crystalline-to-amorphous phase transition in Ge2Sb2Te5cha...