The work was supported by Grant Nos. 2014/14/M/ST3/00821 and 2011/02/A/ST3/00152 from the Polish National Science Centre. Ł.D. acknowledges the financial support from the Foundation for Polish Science within the START fellowship. S.H. acknowledges support from the State of Bavaria in Germany.We report on strongly temperature-dependent kinetics of negatively charged carrier complexes in asymmetric InAs/AlGaInAs/InP quantum dots (dashes) emitting at telecom wavelengths. The structures are highly elongated and of large volume, which results in atypical carrier confinement characteristics with s-p shell energy splittings far below the optical phonon energy, which strongly affects the phonon-assisted relaxation. Probing the emission kinetics wit...
We present a full configuration-interaction study of the spontaneous recombination of neutral and si...
Exciton spin relaxation is investigated in single epitaxially grown semiconductor quantum dots in or...
Exciton spin relaxation is investigated in single epitaxially grown semiconductor quantum dots in or...
We report on strongly temperature-dependent kinetics of negatively charged carrier complexes in asym...
Photoluminescence (PL) kinetics of the InP self-assembled quantum dots is studied under quasiresonan...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
International audienceThe electronic properties of InAs/InP(113)B double-cap quantum dots (QDs) emit...
We have used two- and three-pulse femtosecond differential transmission spectroscopy to study the de...
We report a study on temperature-dependent resonant fluorescence from InAs/GaAs quantum dots. We com...
We present a full configuration-interaction study of the spontaneous recombination of neutral and si...
We present a full configuration-interaction study of the spontaneous recombination of neutral and si...
We report a study on temperature-dependent resonant fluorescence from InAs/GaAs quantum dots. We com...
We report experimental observation and theoretical interpretation of temperature-dependent, time-res...
A method to study carrier relaxation dynamics based on the artificial control of nonradiative losses...
We report experimental observation and theoretical interpretation of temperature-dependent, time-res...
We present a full configuration-interaction study of the spontaneous recombination of neutral and si...
Exciton spin relaxation is investigated in single epitaxially grown semiconductor quantum dots in or...
Exciton spin relaxation is investigated in single epitaxially grown semiconductor quantum dots in or...
We report on strongly temperature-dependent kinetics of negatively charged carrier complexes in asym...
Photoluminescence (PL) kinetics of the InP self-assembled quantum dots is studied under quasiresonan...
This article may be downloaded for personal use only. Any other use requires prior permission of the...
International audienceThe electronic properties of InAs/InP(113)B double-cap quantum dots (QDs) emit...
We have used two- and three-pulse femtosecond differential transmission spectroscopy to study the de...
We report a study on temperature-dependent resonant fluorescence from InAs/GaAs quantum dots. We com...
We present a full configuration-interaction study of the spontaneous recombination of neutral and si...
We present a full configuration-interaction study of the spontaneous recombination of neutral and si...
We report a study on temperature-dependent resonant fluorescence from InAs/GaAs quantum dots. We com...
We report experimental observation and theoretical interpretation of temperature-dependent, time-res...
A method to study carrier relaxation dynamics based on the artificial control of nonradiative losses...
We report experimental observation and theoretical interpretation of temperature-dependent, time-res...
We present a full configuration-interaction study of the spontaneous recombination of neutral and si...
Exciton spin relaxation is investigated in single epitaxially grown semiconductor quantum dots in or...
Exciton spin relaxation is investigated in single epitaxially grown semiconductor quantum dots in or...