Add to ORKGIn this paper, we analyze the multi-frequency C-V curves of In0.53Ga0.47As MOSCAPs by employing physics-based TCAD simulations including both border and interface traps. The calculations reproduce the experimental inversion and accumulation capacitance, and the general trend of the depletion capacitance. A study of the influence of the quantization model on the extraction of the trap distribution is also carried out
The capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor c...
Abstract Border traps and interface traps in HfO2/few-layer MoS2 top-gate stacks are investigated by...
Implementation of high-k dielectrics on InGaAs for CMOS technology requires capabilities to predict ...
This paper reports physics based TCAD simulations of multi-frequency C-V curves of In0.53Ga0.47As MO...
In this paper, we analyze the multi-frequency C-V curves of In0.53Ga0.47As MOSCAPs by employing phys...
In this paper, we analyze the multi-frequency C-V curves of In0.53Ga0.47As MOSCAPs by employing phys...
This work demonstrates that when inelastic band-to-trap tunneling is considered, border traps aligne...
In this paper, the capacitance frequency dispersion in strong accumulation of capacitance voltage cu...
Continuing CMOS performance scaling requires developing MOSFETs of high-mobility semiconductors and ...
Thanks to their superior transport properties, Indium Gallium Arsenide (InGaAs) Metal-Oxide-Semicond...
Thanks to their superior transport properties, indium gallium arsenide (InGaAs) metal-oxide-semicond...
Increased CMOS performance requires the introduction of alternative materials as substrate and gate ...
Charge pumping was used to characterize the interface traps between Al2O3 and In0.75Ga0.25As in an n...
Abstract – A novel method that reveals the spatial distribution of border traps in III-V MOSFETs is ...
In this work, we investigated the effect of forming gas annealing (FGA, 5% H2/95% N2, 250 °C to 450 ...
The capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor c...
Abstract Border traps and interface traps in HfO2/few-layer MoS2 top-gate stacks are investigated by...
Implementation of high-k dielectrics on InGaAs for CMOS technology requires capabilities to predict ...
This paper reports physics based TCAD simulations of multi-frequency C-V curves of In0.53Ga0.47As MO...
In this paper, we analyze the multi-frequency C-V curves of In0.53Ga0.47As MOSCAPs by employing phys...
In this paper, we analyze the multi-frequency C-V curves of In0.53Ga0.47As MOSCAPs by employing phys...
This work demonstrates that when inelastic band-to-trap tunneling is considered, border traps aligne...
In this paper, the capacitance frequency dispersion in strong accumulation of capacitance voltage cu...
Continuing CMOS performance scaling requires developing MOSFETs of high-mobility semiconductors and ...
Thanks to their superior transport properties, Indium Gallium Arsenide (InGaAs) Metal-Oxide-Semicond...
Thanks to their superior transport properties, indium gallium arsenide (InGaAs) metal-oxide-semicond...
Increased CMOS performance requires the introduction of alternative materials as substrate and gate ...
Charge pumping was used to characterize the interface traps between Al2O3 and In0.75Ga0.25As in an n...
Abstract – A novel method that reveals the spatial distribution of border traps in III-V MOSFETs is ...
In this work, we investigated the effect of forming gas annealing (FGA, 5% H2/95% N2, 250 °C to 450 ...
The capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor c...
Abstract Border traps and interface traps in HfO2/few-layer MoS2 top-gate stacks are investigated by...
Implementation of high-k dielectrics on InGaAs for CMOS technology requires capabilities to predict ...