The polarity dependence of the radiation hardness of single-crystalline ZnO bulk crystals is studied by irradiating the Zn-polar and O-polar c-planes with an 8 MeV proton beam up to the fluence of 4.2 × 1016 p/cm2. To analyze the hardness, radiation-induced defects were evaluated using positron annihilation (PA) analysis, and the recovery by post-annealing was examined using continuous-wave photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements. It was suggested by the PA and PL analyses that the major defects in both polarities were VZnVO divacancies. While the PA data did not show the clear dependence on the polarity, the PL and TRPL results showed that the Zn-polar c-plane had a little higher radiation tolerance t...
We report on the use of the photoresponse characteristics of polaritycontrolledZnO films for determi...
The polarity of the ZnO film grown on sapphire using an ultrathin Ga wetting layer has been investig...
Depth-resolved cathodoluminescence spectroscopy, current-voltage, capacitance-voltage, and deep leve...
X ray photoelectron diffraction (XPD) patterns of polar zinc oxide (ZnO) surfaces were investigated ...
High-energy (\u3e1.6 MeV) electrons create acceptors and donors in single-crystal ZnO. Greater damag...
We report on the electrical characterization of single-crystal ZnO and Au Schottky contacts formed t...
Positron annihilation studies have been carried out to clarify the radiation induced defects in ZnO ...
Surface sensitive synchrotron x-ray photoelectron spectroscopy (XPS) and real-time in situ XPS were ...
In space, semiconductor devices are vulnerable to various effect of high energy radiation, causing s...
We have used positron annihilation spectroscopy to study the introduction and recovery of point defe...
Vacancy-type defects in as-grown ZnO single crystals have been identified using positron annihilatio...
Significant polarity-related effects were observed in the near-surface atomic composition and valenc...
We have used positron annihilation spectroscopy to study the introduction and recovery of point defe...
We applied positron annihilation spectroscopy to study the effect of growth polarity on the vacancy ...
Photoluminescence (PL) and optically detected magnetic resonance (ODMR) techniques are utilized to e...
We report on the use of the photoresponse characteristics of polaritycontrolledZnO films for determi...
The polarity of the ZnO film grown on sapphire using an ultrathin Ga wetting layer has been investig...
Depth-resolved cathodoluminescence spectroscopy, current-voltage, capacitance-voltage, and deep leve...
X ray photoelectron diffraction (XPD) patterns of polar zinc oxide (ZnO) surfaces were investigated ...
High-energy (\u3e1.6 MeV) electrons create acceptors and donors in single-crystal ZnO. Greater damag...
We report on the electrical characterization of single-crystal ZnO and Au Schottky contacts formed t...
Positron annihilation studies have been carried out to clarify the radiation induced defects in ZnO ...
Surface sensitive synchrotron x-ray photoelectron spectroscopy (XPS) and real-time in situ XPS were ...
In space, semiconductor devices are vulnerable to various effect of high energy radiation, causing s...
We have used positron annihilation spectroscopy to study the introduction and recovery of point defe...
Vacancy-type defects in as-grown ZnO single crystals have been identified using positron annihilatio...
Significant polarity-related effects were observed in the near-surface atomic composition and valenc...
We have used positron annihilation spectroscopy to study the introduction and recovery of point defe...
We applied positron annihilation spectroscopy to study the effect of growth polarity on the vacancy ...
Photoluminescence (PL) and optically detected magnetic resonance (ODMR) techniques are utilized to e...
We report on the use of the photoresponse characteristics of polaritycontrolledZnO films for determi...
The polarity of the ZnO film grown on sapphire using an ultrathin Ga wetting layer has been investig...
Depth-resolved cathodoluminescence spectroscopy, current-voltage, capacitance-voltage, and deep leve...