Realising epitaxial growth of GaN on (001) diamond

Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy

Schuster, Fabian
Mata, Maria de la
Magén, César
Arbiol, Jordi
Stutzmann, Martin

May 2016

In this work the position-controlled growth of GaN nanowires (NWs) on diamond by means of molecular ...

Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy

Huajie Chen (5386793)
Randall Feenstra (3885121)
J. E. Northrup (5386280)
T. Zywietz (5388308)
J. Neugebauer (5386670)
David Greve (3883804)

June 2018

The surface structures and growth kinetics of InGaN(0001) are studied. It is well known that during ...

ON THE OCCURRENCE OF (113) FACETS ON CVD-GROWN DIAMOND

Janssen, G.
Schermer, J.J.
Vanenckevort, W.J.P.
Giling, L.J.

January 1992

Contains fulltext : 112523.pdf (publisher's version ) (Open Access

Growth of GaN on nano-crystalline diamond substrates

Dreumel, G.W.G. van
Buijnsters, J.G.
Bohnen, T.
Meulen, J.J. ter
Hageman, P.R.
Enckevort, W.J.P. van
Vlieg, E.

January 2009

Contains fulltext : 75292.pdf (publisher's version ) (Closed access)5 p

Realising epitaxial growth of GaN on (001) diamond

van Dreumel, GWG
Tinnemans, PT
van den Heuvel, AAJ
Bohnen, T
Buijnsters, Josephus Gerardus
ter Meulen, JJ
van Enckevort, WJP
Hageman, PR
Vlieg, E

July 2011

By an extensive investigation of the principal growth parameters on the deposition process, we reali...

Homo-epitaxial growth on the N-face of GaN single crystals: the influence of the misorientation on the surface morphology

Zauner, A.R.A.
Aret, E.
Enckevort, W.J.P. van
Weyher, J.L.
Porowski, S.
Schermer, J.J.

January 2002

Contains fulltext : 112615.pdf (publisher's version ) (Closed access

Comparison of GaN and AlN nucleation layers for the oriented growth of GaN on diamond substrates

Dreumel, G.W.G. van
Bohnen, T.
Buijnsters, J.G.
Enckevort, W.J.P. van
Meulen, J.J. ter
Hageman, P.R.
Vlieg, E.

January 2010

Contains fulltext : 83561.pdf (publisher's version ) (Closed access)4 p

Diamond surfaces: growth and etching mechanisms

Theije, F.K. de

January 2001

Contains fulltext : mmubn000001_349199566.pdf (publisher's version ) (Closed acces...

Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates

Rudzinski, M.
Jezierska, E.
Weyher, J.L.
Macht, L.
Hageman, P.R.
Borysiuk, J.
Rodle, T.C.
Jos, H.F.F.
Larsen, P.K.

January 2007

Contains fulltext : 34898.pdf (publisher's version ) (Open Access

GaN grown on SiC by MOCVD: materials for HEMT applications

Rudziński, M.

January 2008

Contains fulltext : 147009.pdf (Publisher’s version ) (Open Access)XII, 147 p

Strain relaxation in GaN grown on vicinal 4H-SiC (0001) substrates

Pernot, J.
Bustarret, E.
Rudziński, M.
Hageman, P.R.
Larsen, P.K.

January 2007

Contains fulltext : 36503.pdf (publisher's version ) (Open Access

Growth of {100} textured diamond films by the addition of nitrogen

Cao, G.Z.
Schermer, J.J.
Enckevort, W.J.P. van
Elst, W.A.L.M.
Giling, L.J.

January 1996

Contains fulltext : 29018___.PDF (publisher's version ) (Open Access

Photoluminescence study of homoepitaxial N-polar GaN grown on differently misoriented single crystal substrates

Kirilyuk, V.
Zauner, A.R.A.
Christianen, P.C.M.
Weyher, J.L.
Hageman, P.R.
Larsen, P.K.

January 2001

Contains fulltext : 112557.pdf (publisher's version ) (Closed access

Direct deposition of polycrystalline diamond onto steel substrates

Buijnsters, J.G.
Shankar, P.
Meulen, J.J. ter

January 2007

Contains fulltext : 34875.pdf (publisher's version ) (Closed access

Reduction of dislocation density in epitaxial gan layers bij overgrowth of defect-related etch pits

Weyher, J.L.
Ashraf, H.
Hageman, P.R.

January 2009

Contains fulltext : 75929.pdf (publisher's version ) (Open Access

Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy

Schuster, Fabian
Mata, Maria de la
Magén, César
Arbiol, Jordi
Stutzmann, Martin

May 2016

In this work the position-controlled growth of GaN nanowires (NWs) on diamond by means of molecular ...

Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy

Huajie Chen (5386793)
Randall Feenstra (3885121)
J. E. Northrup (5386280)
T. Zywietz (5388308)
J. Neugebauer (5386670)
David Greve (3883804)

June 2018

The surface structures and growth kinetics of InGaN(0001) are studied. It is well known that during ...

ON THE OCCURRENCE OF (113) FACETS ON CVD-GROWN DIAMOND

Janssen, G.
Schermer, J.J.
Vanenckevort, W.J.P.
Giling, L.J.

January 1992

Contains fulltext : 112523.pdf (publisher's version ) (Open Access

Growth of GaN on nano-crystalline diamond substrates

Dreumel, G.W.G. van
Buijnsters, J.G.
Bohnen, T.
Meulen, J.J. ter
Hageman, P.R.
Enckevort, W.J.P. van
Vlieg, E.

January 2009

Contains fulltext : 75292.pdf (publisher's version ) (Closed access)5 p

Realising epitaxial growth of GaN on (001) diamond

van Dreumel, GWG
Tinnemans, PT
van den Heuvel, AAJ
Bohnen, T
Buijnsters, Josephus Gerardus
ter Meulen, JJ
van Enckevort, WJP
Hageman, PR
Vlieg, E

July 2011

By an extensive investigation of the principal growth parameters on the deposition process, we reali...

Homo-epitaxial growth on the N-face of GaN single crystals: the influence of the misorientation on the surface morphology

Zauner, A.R.A.
Aret, E.
Enckevort, W.J.P. van
Weyher, J.L.
Porowski, S.
Schermer, J.J.

January 2002

Contains fulltext : 112615.pdf (publisher's version ) (Closed access

Comparison of GaN and AlN nucleation layers for the oriented growth of GaN on diamond substrates

Dreumel, G.W.G. van
Bohnen, T.
Buijnsters, J.G.
Enckevort, W.J.P. van
Meulen, J.J. ter
Hageman, P.R.
Vlieg, E.

January 2010

Contains fulltext : 83561.pdf (publisher's version ) (Closed access)4 p

Diamond surfaces: growth and etching mechanisms

Theije, F.K. de

January 2001

Contains fulltext : mmubn000001_349199566.pdf (publisher's version ) (Closed acces...

Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates

Rudzinski, M.
Jezierska, E.
Weyher, J.L.
Macht, L.
Hageman, P.R.
Borysiuk, J.
Rodle, T.C.
Jos, H.F.F.
Larsen, P.K.

January 2007

Contains fulltext : 34898.pdf (publisher's version ) (Open Access

GaN grown on SiC by MOCVD: materials for HEMT applications

Rudziński, M.

January 2008

Contains fulltext : 147009.pdf (Publisher’s version ) (Open Access)XII, 147 p

Strain relaxation in GaN grown on vicinal 4H-SiC (0001) substrates

Pernot, J.
Bustarret, E.
Rudziński, M.
Hageman, P.R.
Larsen, P.K.

January 2007

Contains fulltext : 36503.pdf (publisher's version ) (Open Access

Growth of {100} textured diamond films by the addition of nitrogen

Cao, G.Z.
Schermer, J.J.
Enckevort, W.J.P. van
Elst, W.A.L.M.
Giling, L.J.

January 1996

Contains fulltext : 29018___.PDF (publisher's version ) (Open Access

Photoluminescence study of homoepitaxial N-polar GaN grown on differently misoriented single crystal substrates

Kirilyuk, V.
Zauner, A.R.A.
Christianen, P.C.M.
Weyher, J.L.
Hageman, P.R.
Larsen, P.K.

January 2001

Contains fulltext : 112557.pdf (publisher's version ) (Closed access

Direct deposition of polycrystalline diamond onto steel substrates

Buijnsters, J.G.
Shankar, P.
Meulen, J.J. ter

January 2007

Contains fulltext : 34875.pdf (publisher's version ) (Closed access

Reduction of dislocation density in epitaxial gan layers bij overgrowth of defect-related etch pits

Weyher, J.L.
Ashraf, H.
Hageman, P.R.

January 2009

Contains fulltext : 75929.pdf (publisher's version ) (Open Access

Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy

Schuster, Fabian
Mata, Maria de la
Magén, César
Arbiol, Jordi
Stutzmann, Martin

May 2016

In this work the position-controlled growth of GaN nanowires (NWs) on diamond by means of molecular ...

Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy

Huajie Chen (5386793)
Randall Feenstra (3885121)
J. E. Northrup (5386280)
T. Zywietz (5388308)
J. Neugebauer (5386670)
David Greve (3883804)

June 2018

The surface structures and growth kinetics of InGaN(0001) are studied. It is well known that during ...

ON THE OCCURRENCE OF (113) FACETS ON CVD-GROWN DIAMOND

Janssen, G.
Schermer, J.J.
Vanenckevort, W.J.P.
Giling, L.J.

January 1992

Contains fulltext : 112523.pdf (publisher's version ) (Open Access

Realising epitaxial growth of GaN on (001) diamond

Abstract

Extracted data

Realising epitaxial growth of GaN on (001) diamond

Abstract

Extracted data

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