The formation and evolution of the prominent and so-called E3 center in ZnO has been studied by in-situ deep level transient spectroscopy measurements after on-line implantation of hydrogen (H) and deuterium (D) ions at sample temperatures of and . The formation of E3 is shown to involve migration and subsequent trapping of interstitial hydrogen (Hi), or deuterium, and starts to occur already below 200 K. The concentration of implantation-induced E3 centers is rather unstable and decreases gradually at temperatures around 300 K by an annealing process obeying first-order kinetics. The process exhibits an activation energy of and involves presumably trapping of migrating Hi's leading to passivation of the E3 centers. A kinetics model is pr...
The evolution of luminescence properties and voids formation with respect to annealing temperature i...
Native and hydrogen-plasma induced shallow traps in hydrothermally grown ZnO crystals have been inve...
We have used positron annihilation spectroscopy to study the introduction and recovery of point defe...
Hydrothermally grown n-type ZnO bulk samples have been implanted with protons and deuterium ions to ...
We studied the structural properties, defect formation, and thermal stability of H in hydrothermally...
Hydrogen is readily incorporated into bulk, single-crystal ZnO during exposure to plasmas at moderat...
Zinc oxide (ZnO) is a wide band gap semiconductor with potential optical, electronic, and mechanical...
Open volume defects, clearly distinguishable from the isolated Zn-vacancy are observed in hydrotherm...
Zinc Oxide (ZnO)is a wide band gap semiconductor which has attracted great attention because of its ...
An n-type hydrothermally grown ZnO sample becomes semi-insulating (ρ~108 Ω cm) after 1-MeV electron-...
Deep level traps in melt grown ZnO single crystal created by oxygen implantation and subsequent anne...
Direct evidence of the formation of nitrogen molecules (N2) after ion implantion of ZnO has been rev...
Hydrogen incorporation depths of \u3e25 μm were obtained in bulk, single-crystal ZnO during exposure...
Defects in hydrothermal grown ZnO single crystals are studied as a function of annealing temperature...
Zinc oxide (ZnO), as a Ⅱ-Ⅵ compound semiconductor with a wide direct band gap, has attracted great a...
The evolution of luminescence properties and voids formation with respect to annealing temperature i...
Native and hydrogen-plasma induced shallow traps in hydrothermally grown ZnO crystals have been inve...
We have used positron annihilation spectroscopy to study the introduction and recovery of point defe...
Hydrothermally grown n-type ZnO bulk samples have been implanted with protons and deuterium ions to ...
We studied the structural properties, defect formation, and thermal stability of H in hydrothermally...
Hydrogen is readily incorporated into bulk, single-crystal ZnO during exposure to plasmas at moderat...
Zinc oxide (ZnO) is a wide band gap semiconductor with potential optical, electronic, and mechanical...
Open volume defects, clearly distinguishable from the isolated Zn-vacancy are observed in hydrotherm...
Zinc Oxide (ZnO)is a wide band gap semiconductor which has attracted great attention because of its ...
An n-type hydrothermally grown ZnO sample becomes semi-insulating (ρ~108 Ω cm) after 1-MeV electron-...
Deep level traps in melt grown ZnO single crystal created by oxygen implantation and subsequent anne...
Direct evidence of the formation of nitrogen molecules (N2) after ion implantion of ZnO has been rev...
Hydrogen incorporation depths of \u3e25 μm were obtained in bulk, single-crystal ZnO during exposure...
Defects in hydrothermal grown ZnO single crystals are studied as a function of annealing temperature...
Zinc oxide (ZnO), as a Ⅱ-Ⅵ compound semiconductor with a wide direct band gap, has attracted great a...
The evolution of luminescence properties and voids formation with respect to annealing temperature i...
Native and hydrogen-plasma induced shallow traps in hydrothermally grown ZnO crystals have been inve...
We have used positron annihilation spectroscopy to study the introduction and recovery of point defe...