The ultimate objective of this PhD Thesis is the study of the performance of nanometric transistors, and the importance that quantum effects have on the determination of their behavior. To do so, this work presents a description of the new architectures which are postulated as an alternative for future technological nodes, and the simulation tools employed to achieve an accurate determination of the electrostatic and transport properties of such devices, accounting for the dominant quantum effects which they undergo. We start with a summary of several technological architectures which are proposed to overcome the downscaling limitations of conventional planar devices. They are required to keep under control the short-channel effect...
ii As the dimensions of commonly used semiconductor devices have shrunk into nanometer regime, it is...
In this paper, we review recent developments of the Monte Carlo approach to the simulation of semi-c...
In this paper, we review recent developments of the Monte Carlo approach to the simulation of semi-c...
Today, the MOSFET transistor reaches nanometric dimensions for which quantum effects cannot be negle...
Le transistor MOSFET atteint aujourd hui des dimensions nanométriques pour lesquelles les effets qua...
With the progress of integrated technology, the feature size of experimental electron devices have a...
Rapporteurs: Christophe DELERUE, IEMN-CNRS, Lille; Philippe DOLLFUS, IEF-CNRS, Orsay; Examinateurs: ...
Rapporteurs: Christophe DELERUE, IEMN-CNRS, Lille; Philippe DOLLFUS, IEF-CNRS, Orsay; Examinateurs: ...
none5In this paper, we review recent developments of the Monte Carlo approach to the simulation of s...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
ii As the dimensions of commonly used semiconductor devices have shrunk into nanometer regime, it is...
In this paper, we review recent developments of the Monte Carlo approach to the simulation of semi-c...
In this paper, we review recent developments of the Monte Carlo approach to the simulation of semi-c...
Today, the MOSFET transistor reaches nanometric dimensions for which quantum effects cannot be negle...
Le transistor MOSFET atteint aujourd hui des dimensions nanométriques pour lesquelles les effets qua...
With the progress of integrated technology, the feature size of experimental electron devices have a...
Rapporteurs: Christophe DELERUE, IEMN-CNRS, Lille; Philippe DOLLFUS, IEF-CNRS, Orsay; Examinateurs: ...
Rapporteurs: Christophe DELERUE, IEMN-CNRS, Lille; Philippe DOLLFUS, IEF-CNRS, Orsay; Examinateurs: ...
none5In this paper, we review recent developments of the Monte Carlo approach to the simulation of s...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
ii As the dimensions of commonly used semiconductor devices have shrunk into nanometer regime, it is...
In this paper, we review recent developments of the Monte Carlo approach to the simulation of semi-c...
In this paper, we review recent developments of the Monte Carlo approach to the simulation of semi-c...