By increasing coolant flow rate, the junction temperature of IGBT power modules can be reduced but this is accompanied by undesirable increase in pressure and pumping power. In this paper, numerical simulation and multi-objective optimization methods have been used to obtain a trade-off relationship between reducing IGBT junction temperature and the increase in pressure drop due to increased coolant flow-rate. It is found that the pressure drop increases more than 100% for a 10% reduction in IGBT maximum junction temperature due to the increased coolant flow rate. The impact of the IGBT junction temperature on the power module lifetime has also been investigated. Moreover, an effective and efficient work-flow in integrating numerical method...
The proper selection of the heat sink, which is attached at the insulated-gate bipolar transistor (I...
Field experiences have demonstrated that power semiconductor devices, such as insulated-gate bipolar...
Semiconductor-based power electronics such as IGBT (insulated-gate bipolar transistor) modules are u...
Estimation of accurate IGBT junction temperature is crucial for reliability assessment. The well-kno...
As an increasing attention towards sustainable development of energy and environment, the power elec...
Thermal stress in IGBT power module can lead to sever thermal reliability problems such as module de...
With the increase of power level and integration in electric vehicle controllers, the heat flux of t...
[[abstract]]In the exploration of new energy sources and the search for a path to sustainable develo...
Temperature junction constraints in power semiconductor devices are one of the factors that can dete...
As the power density and switching frequency increase, thermal analysis of power electronics system ...
In order to discuss the effectiveness of inverter performance, it is essential to concentrate on its...
Thermal loading of Insulated Gate Bipolar Transistor (IGBT) modules is important for the reliability...
Field experiences have demonstrated that power semiconductor devices, such as insulated-gate bipolar...
Power semiconductor chips are parallelly packed in modules to achieve a specific current capacity an...
Power devices such as IGBTs (Insulated Gate Bipolar Transistors) operate within a large temperature ...
The proper selection of the heat sink, which is attached at the insulated-gate bipolar transistor (I...
Field experiences have demonstrated that power semiconductor devices, such as insulated-gate bipolar...
Semiconductor-based power electronics such as IGBT (insulated-gate bipolar transistor) modules are u...
Estimation of accurate IGBT junction temperature is crucial for reliability assessment. The well-kno...
As an increasing attention towards sustainable development of energy and environment, the power elec...
Thermal stress in IGBT power module can lead to sever thermal reliability problems such as module de...
With the increase of power level and integration in electric vehicle controllers, the heat flux of t...
[[abstract]]In the exploration of new energy sources and the search for a path to sustainable develo...
Temperature junction constraints in power semiconductor devices are one of the factors that can dete...
As the power density and switching frequency increase, thermal analysis of power electronics system ...
In order to discuss the effectiveness of inverter performance, it is essential to concentrate on its...
Thermal loading of Insulated Gate Bipolar Transistor (IGBT) modules is important for the reliability...
Field experiences have demonstrated that power semiconductor devices, such as insulated-gate bipolar...
Power semiconductor chips are parallelly packed in modules to achieve a specific current capacity an...
Power devices such as IGBTs (Insulated Gate Bipolar Transistors) operate within a large temperature ...
The proper selection of the heat sink, which is attached at the insulated-gate bipolar transistor (I...
Field experiences have demonstrated that power semiconductor devices, such as insulated-gate bipolar...
Semiconductor-based power electronics such as IGBT (insulated-gate bipolar transistor) modules are u...