Usage of power converters in a vast variety of equipments from cellphones, laptops to automobiles, aeroplanes and satellites is increasing. Different synchronous buck converter configurations are considered in this work using Silicon (Si) devices and Gallium Nitride (GaN) devices of equal current ratings. The performance of these converters in terms of power losses and overall efficiency are compared. It is shown that the usage of GaN devices instead of Si devices reduces the power losses and improves the overall efficiency of the power converter. A hybrid synchronous buck converter topology consisting of one Si device and one GaN device is shown to have the lowest rated power loss for switches with similar ratings. The usage of GaN device ...
With the rapid development of gallium nitride (GaN) based system technology, it is now possible to d...
Abstract—Gallium Nitride (GaN) is increasingly considered a viable semiconductor material in future ...
The benefits of using gallium nitride (GaN) based transistors in power electronic converters are dem...
Usage of power converters in a vast variety of equipments from cellphones, laptops to automobiles, a...
The purpose of the article is a comparison between DC/DC topologies with a wide input voltage range....
abstract: This work analyzes and develops a point-of-load (PoL) synchronous buck converter using enh...
Gallium Nitride (GaN)-based devices offer many advantages over conventional electronic devices, such...
International audienceThis article deals with the conception of a 42V-12V isolated DC-DC converter u...
It is widely recognized that Hybrid Vehicles (HVs) are suitable for solving problems of energy savin...
Limitations of Silicon (Si)-based devices have compelled us to use alternative devices for modern po...
This paper attempts to disclose a new GaN-based device, called the P-Cascode GaN HEMT, which uses on...
Present day applications using power electronic converters are focusing towards improving the speed,...
Wide bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), exhibit ...
Theoretical thesis.Bibliography: pages 54-59.Chapter 1.Introduction -- Chapter 2. Literature review ...
Wide band-gap (WBG) semiconductors technology represents a potential candidate to displace conventi...
With the rapid development of gallium nitride (GaN) based system technology, it is now possible to d...
Abstract—Gallium Nitride (GaN) is increasingly considered a viable semiconductor material in future ...
The benefits of using gallium nitride (GaN) based transistors in power electronic converters are dem...
Usage of power converters in a vast variety of equipments from cellphones, laptops to automobiles, a...
The purpose of the article is a comparison between DC/DC topologies with a wide input voltage range....
abstract: This work analyzes and develops a point-of-load (PoL) synchronous buck converter using enh...
Gallium Nitride (GaN)-based devices offer many advantages over conventional electronic devices, such...
International audienceThis article deals with the conception of a 42V-12V isolated DC-DC converter u...
It is widely recognized that Hybrid Vehicles (HVs) are suitable for solving problems of energy savin...
Limitations of Silicon (Si)-based devices have compelled us to use alternative devices for modern po...
This paper attempts to disclose a new GaN-based device, called the P-Cascode GaN HEMT, which uses on...
Present day applications using power electronic converters are focusing towards improving the speed,...
Wide bandgap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), exhibit ...
Theoretical thesis.Bibliography: pages 54-59.Chapter 1.Introduction -- Chapter 2. Literature review ...
Wide band-gap (WBG) semiconductors technology represents a potential candidate to displace conventi...
With the rapid development of gallium nitride (GaN) based system technology, it is now possible to d...
Abstract—Gallium Nitride (GaN) is increasingly considered a viable semiconductor material in future ...
The benefits of using gallium nitride (GaN) based transistors in power electronic converters are dem...