Si-gold-glass hybrid wafer bond for 3D-MEMS and wafer level packaging

We report a relatively low temperature (< 400 degrees C) hybrid wafer bonding process that results in the simultaneous anodic and eutectic bonding in different predetermined regions of the wafer. This hybrid bonding process has potential applications in CMOS-MEMS device integration and wafer level packaging. We demonstrate the process by realizing a simple MEMS cantilever beam and a complex MEMS gyroscope structure. These structures are characterized for ohmic contact and electromechanical response to verify the electrical interconnect and the mechanical strength of the structure at the bond interface