Dead-time is introduced between the gating signals to the top and bottom switches in a voltage source inverter (VSI) leg, to prevent shoot through fault due to the finite turn-off times of IGBTs. The dead-time results in a delay when the incoming device is an IGBT, resulting in error voltage pulses in the inverter output voltage. This paper presents the design, fabrication and testing of an advanced gate driver, which eliminates dead-time and consequent output distortion. Here, the gating pulses are generated such that the incoming IGBT transition is not delayed and shoot-through is also prevented. The various logic units of the driver card and fault tolerance of the driver are verified through extensive tests on different topologies such...
In the present time, electrical power conversion is performed more and more widely using fully-contr...
ABSTRACT: The Design of efficient, safe, and reliable circuits is a prime objective in high-voltage ...
Abstract: Bipolar semiconductor devices are often used as switches in very high power electronic cir...
Dead-time is introduced between the gating signals to the top and bottom switches in a voltage sourc...
This work introduces a novel gate driver for use with wide-bandgap devices in high-power, high-preci...
Insulated gate bipolar transistors (IGBT) have evolved significantly and become exceedingly fast. To...
The increase of the switching speed in power semiconductors leads to converters with better efficien...
This paper presents a voltage-controlled multistage gate driver topology for delay time minimization...
The insulated gate bipolar transistors (IGBTs) are widely used in various applications as they requi...
Gate drivers form an essential interface between the high power transistors and low voltage control ...
The purpose of this thesis research was to develop a new gate driver circuit for IGBT semiconductor ...
This paper presents a survey of existing gate driving approaches for improving reliability of Insula...
Insulated-gate bipolar transistors (IGBTs) always operate in parallel for a large output current in ...
Abstract—The aim of this paper is to discuss new solutions in the design of insulated gate bipolar t...
Inverter dead-time, which is meant to prevent shoot-through\ud fault, causes harmonic distortion and...
In the present time, electrical power conversion is performed more and more widely using fully-contr...
ABSTRACT: The Design of efficient, safe, and reliable circuits is a prime objective in high-voltage ...
Abstract: Bipolar semiconductor devices are often used as switches in very high power electronic cir...
Dead-time is introduced between the gating signals to the top and bottom switches in a voltage sourc...
This work introduces a novel gate driver for use with wide-bandgap devices in high-power, high-preci...
Insulated gate bipolar transistors (IGBT) have evolved significantly and become exceedingly fast. To...
The increase of the switching speed in power semiconductors leads to converters with better efficien...
This paper presents a voltage-controlled multistage gate driver topology for delay time minimization...
The insulated gate bipolar transistors (IGBTs) are widely used in various applications as they requi...
Gate drivers form an essential interface between the high power transistors and low voltage control ...
The purpose of this thesis research was to develop a new gate driver circuit for IGBT semiconductor ...
This paper presents a survey of existing gate driving approaches for improving reliability of Insula...
Insulated-gate bipolar transistors (IGBTs) always operate in parallel for a large output current in ...
Abstract—The aim of this paper is to discuss new solutions in the design of insulated gate bipolar t...
Inverter dead-time, which is meant to prevent shoot-through\ud fault, causes harmonic distortion and...
In the present time, electrical power conversion is performed more and more widely using fully-contr...
ABSTRACT: The Design of efficient, safe, and reliable circuits is a prime objective in high-voltage ...
Abstract: Bipolar semiconductor devices are often used as switches in very high power electronic cir...