Non-crystalline semiconductor based thin film transistors are the building blocks of large area electronic systems. These devices experience a threshold voltage shift with time due to prolonged gate bias stress. In this paper we integrate a recursive model for threshold voltage shift with the open source BSIM4V4 model of AIM-Spice. This creates a tool for circuit simulation for TFTs. We demonstrate the integrity of the model using several test cases including display driver circuits
In this article, we propose a novel real-time threshold voltage ( $V_{th}$ ) compensation method for...
Abstract: A theoretical model to interpret appearances of the threshold voltage shift in hydrogenate...
This paper reviews the importance of device-circuit interactions (DCI) and its consideration when de...
Non-crystalline semiconductor based thin film transistors are the building blocks of large area elec...
Non-crystalline semiconductor based thin film transistors are the building blocks of large area elec...
Amorphous silicon (a-Si:H) thin-film transistors (TFTs) are widely used in active matrix displays an...
Thin Film Transistors (TFTs) are widely used in large area electronics because they offer the advant...
Conventionally, the applications of non-crystalline semiconductor based Thin Film Transistors (TFTs)...
Conventionally, the applications of non-crystalline semiconductor based Thin Film Transistors (TFTs)...
Amorphous hydrogenated silicon thin-film transistors (TFTs) are critical components in large area di...
Abstract—This brief presents a novel approach to modeling gate bias-induced threshold-voltage (Vth) ...
A reliable driving scheme that can compensate for the inherent instability of hydrogenated amorphous...
Polymer thin-film transistors based on poly(2-methoxy-5-(2′-ethyl- hexyloxy)-1,4-phenylene vinylene)...
We present an accurate small signal model for thin film transistors (TFTs) taking into account non-i...
We present an accurate small signal model for thin-film transistors (TFTs) taking into account non-i...
In this article, we propose a novel real-time threshold voltage ( $V_{th}$ ) compensation method for...
Abstract: A theoretical model to interpret appearances of the threshold voltage shift in hydrogenate...
This paper reviews the importance of device-circuit interactions (DCI) and its consideration when de...
Non-crystalline semiconductor based thin film transistors are the building blocks of large area elec...
Non-crystalline semiconductor based thin film transistors are the building blocks of large area elec...
Amorphous silicon (a-Si:H) thin-film transistors (TFTs) are widely used in active matrix displays an...
Thin Film Transistors (TFTs) are widely used in large area electronics because they offer the advant...
Conventionally, the applications of non-crystalline semiconductor based Thin Film Transistors (TFTs)...
Conventionally, the applications of non-crystalline semiconductor based Thin Film Transistors (TFTs)...
Amorphous hydrogenated silicon thin-film transistors (TFTs) are critical components in large area di...
Abstract—This brief presents a novel approach to modeling gate bias-induced threshold-voltage (Vth) ...
A reliable driving scheme that can compensate for the inherent instability of hydrogenated amorphous...
Polymer thin-film transistors based on poly(2-methoxy-5-(2′-ethyl- hexyloxy)-1,4-phenylene vinylene)...
We present an accurate small signal model for thin film transistors (TFTs) taking into account non-i...
We present an accurate small signal model for thin-film transistors (TFTs) taking into account non-i...
In this article, we propose a novel real-time threshold voltage ( $V_{th}$ ) compensation method for...
Abstract: A theoretical model to interpret appearances of the threshold voltage shift in hydrogenate...
This paper reviews the importance of device-circuit interactions (DCI) and its consideration when de...