Add to ORKGRadially-homogeneous and single-phase InAsxSb(1−x) crystals, up to 5.0 at. % As concentration, have been grown using the rotatory Bridgman method. Single crystallinity has been confirmed by x-ray and electron diffraction studies. Infrared transmission spectra show a continuous decrease in optical energy gap with the increase of arsenic content in InSb. The measured values of mobility and carrier density at room temperature (for x = .05) are 5.6×104 cm2/V s and 2.04×1016 cm−3, respectively
The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been inves...
A series of undoped InSb and InAsxSb1-x layers were grown using tetramer Sb4 and As4 sources on (100...
The rotatory Bridgman method was used to grow ternary $InSb_{(1-x)}Bi_x$ crystals. In this method th...
Radially-homogeneous and single-phase InAsxSb(1−x) crystals, up to 5.0 at. % As concentration, have ...
Radially-homogeneous and single-phase InAsx Sb(1–x) crystals, up to 5.0 at. % As concentration, have...
The InAsxSb1-x films were grown on (100) GaSb substrates by liquid-phase epitaxy, and their structur...
Molecular‐beam epitaxy has been successfully used to grow InAsxSb1−x on InP substrates with good ele...
The InAs1–xSbx ternary alloy band gap nonlinearly depends on the composition, which gives the opport...
Results of electrical characterization of Au nucleated InAs1-xSbx nanowires grown by molecular beam ...
The Rotatary Bridgman method was used to grow ternary InSb(1-x)SBix, crystals. In this method the am...
Temperature dependence of the energy gap and free carrier absorption in a high-quality InAs0.05Sb0.9...
Growth of high-quality single-crystalline InSb layers remains challenging in material science. Such ...
We briefly review the growth and structural properties of $InAs_xSb_{1-x} (x\leq0.05)$ bulk single c...
Temperature dependence of the energy gap and free carrier absorption in a high-quality $InAs_0_._0_5...
The preparation of solid samples of InAs- InSb alloys suitable for optical transmission and electric...
The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been inves...
A series of undoped InSb and InAsxSb1-x layers were grown using tetramer Sb4 and As4 sources on (100...
The rotatory Bridgman method was used to grow ternary $InSb_{(1-x)}Bi_x$ crystals. In this method th...
Radially-homogeneous and single-phase InAsxSb(1−x) crystals, up to 5.0 at. % As concentration, have ...
Radially-homogeneous and single-phase InAsx Sb(1–x) crystals, up to 5.0 at. % As concentration, have...
The InAsxSb1-x films were grown on (100) GaSb substrates by liquid-phase epitaxy, and their structur...
Molecular‐beam epitaxy has been successfully used to grow InAsxSb1−x on InP substrates with good ele...
The InAs1–xSbx ternary alloy band gap nonlinearly depends on the composition, which gives the opport...
Results of electrical characterization of Au nucleated InAs1-xSbx nanowires grown by molecular beam ...
The Rotatary Bridgman method was used to grow ternary InSb(1-x)SBix, crystals. In this method the am...
Temperature dependence of the energy gap and free carrier absorption in a high-quality InAs0.05Sb0.9...
Growth of high-quality single-crystalline InSb layers remains challenging in material science. Such ...
We briefly review the growth and structural properties of $InAs_xSb_{1-x} (x\leq0.05)$ bulk single c...
Temperature dependence of the energy gap and free carrier absorption in a high-quality $InAs_0_._0_5...
The preparation of solid samples of InAs- InSb alloys suitable for optical transmission and electric...
The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been inves...
A series of undoped InSb and InAsxSb1-x layers were grown using tetramer Sb4 and As4 sources on (100...
The rotatory Bridgman method was used to grow ternary $InSb_{(1-x)}Bi_x$ crystals. In this method th...