Add to ORKGIn this work, using 3-D device simulation, we perform an extensive gate to source/drain underlap optimization for the recently proposed hybrid transistor, HFinFET, to show that the underlap lengths can be suitably tuned to improve the ON-OFF ratio as well as the subthreshold characteristics in an ultrashort channel n-type device without significantON performance degradation. We also show that the underlap knob can be tuned to mitigate the device quality degradation in presence of interface traps. The obtained results are shown to be promising when compared against ITRS 2009 performance projections, as well as published state of the art planar and nonplanar Silicon MOSFET data of comparable gate lengths using standard benchmarking techniques
In this work, we report on the significance of underlap channel architecture in Ultra Thin Body BOX ...
As the device size shrinks continuously by scaling in the current Si CMOS technology, the drain indu...
Sub-20 nm gate length FinFETs, are constrained by the very thin fin thickness (T(FIN)) necessary to ...
In this work, using 3-D device simulation, we perform an extensive gate to source/drain underlap opt...
Abstract—In this work, using 3D device simulation, we perform an extensive gate to source/drain unde...
Leakage currents in CMOS transistors have risen dramatically with technology scaling leading to sign...
In this letter, we propose the design and simulation study of a novel transistor, called HFinFET, wh...
The difficulty to fabricate and control precisely defined doping profiles in the source/drain underl...
DoctorI present numerical simulation results and physical analysis of the electrical characteristics...
AbstractFrom the commencement of CMOS scaling, the simple MOSFETs are not up to the performance due ...
The effect of gate length 8 nm with underlap of double gate MOSFET has been designed for VLSI Techno...
Ultrathin body MOSFETs are suitable in sub-50nm technologies due to their excellent immunity to shor...
Sub-20 nm gate length FinFETs, are constrained by the very thin fin thickness (TFIN) necessary to ma...
© 2021 IEEE. The effect of gate length 8 nm with underlap of double-gate MOSFET has been designed fo...
As the device size shrinks continuously by scaling in the current Si CMOS technology, subthreshold s...
In this work, we report on the significance of underlap channel architecture in Ultra Thin Body BOX ...
As the device size shrinks continuously by scaling in the current Si CMOS technology, the drain indu...
Sub-20 nm gate length FinFETs, are constrained by the very thin fin thickness (T(FIN)) necessary to ...
In this work, using 3-D device simulation, we perform an extensive gate to source/drain underlap opt...
Abstract—In this work, using 3D device simulation, we perform an extensive gate to source/drain unde...
Leakage currents in CMOS transistors have risen dramatically with technology scaling leading to sign...
In this letter, we propose the design and simulation study of a novel transistor, called HFinFET, wh...
The difficulty to fabricate and control precisely defined doping profiles in the source/drain underl...
DoctorI present numerical simulation results and physical analysis of the electrical characteristics...
AbstractFrom the commencement of CMOS scaling, the simple MOSFETs are not up to the performance due ...
The effect of gate length 8 nm with underlap of double gate MOSFET has been designed for VLSI Techno...
Ultrathin body MOSFETs are suitable in sub-50nm technologies due to their excellent immunity to shor...
Sub-20 nm gate length FinFETs, are constrained by the very thin fin thickness (TFIN) necessary to ma...
© 2021 IEEE. The effect of gate length 8 nm with underlap of double-gate MOSFET has been designed fo...
As the device size shrinks continuously by scaling in the current Si CMOS technology, subthreshold s...
In this work, we report on the significance of underlap channel architecture in Ultra Thin Body BOX ...
As the device size shrinks continuously by scaling in the current Si CMOS technology, the drain indu...
Sub-20 nm gate length FinFETs, are constrained by the very thin fin thickness (T(FIN)) necessary to ...