Exposure with above band gap light and thermal annealing at a temperature near to glass transition temperature, of thermally evaporated amorphous (As2S3)(0.87)Sb-0.13 thin films of 1 mu m thickness, were found to be accompanied by structural effects, which in turn, lead to changes in the optical properties. The optical properties of thin films induced by illumination and annealing were studied by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. Photo darkening or photo bleaching was observed in the film depending upon the conditions of the light exposure or annealing. These changes of the optical properties are assigned to the change of homopolar bond densities. (C) 2010 Elsevier B.V. All rig...
The photo-induced effects of Ge12Sb25S63 films illuminated with 532 nm laser light are investigated ...
The photo-induced effects of Ge12Sb25S63 films illuminated with 532 nm laser light are investigated ...
The change in photo-induced optical properties in thermally evaporated Ge12Sb25Se63 chalcogenide thi...
The thermally evaporated As20Sb20S60 amorphous film of 800 nm thickness was subjected to light expos...
The thermally evaporated As20Sb20S60 amorphous film of 800 nm thickness was subjected to light expos...
The exposure with band gap light of thermally evaporated As40Sb15Se45 amorphous film of 800 nm thick...
The thermally evaporated amorphous Sb40Se20S40 thin film of 800 nm thickness was subjected to light ...
The influence of thermal annealing on the structure and optical properties of antimony trisulfide (S...
The thermally evaporated amorphous Sb40Se20S40 thin film of 800 nm thickness was subjected to light ...
We report the effects of thermal-annealing and light-soaking on the structure of amorphous (a-) As2S...
Thin films of Sb20S40Se40 of thickness 800 nm were prepared by thermal evaporation method. The as-pr...
Thin films of Sb20S40Se40 of thickness 800 nm were prepared by thermal evaporation method. The as-pr...
Thin films of Sb40Se20S40 with thickness 1000 nm were prepared by thermal evaporation technique. The...
The increase in optical band gap (photo bleaching) due to light illumination was studied at room tem...
The increase in optical band gap (photo bleaching) due to light illumination was studied at room tem...
The photo-induced effects of Ge12Sb25S63 films illuminated with 532 nm laser light are investigated ...
The photo-induced effects of Ge12Sb25S63 films illuminated with 532 nm laser light are investigated ...
The change in photo-induced optical properties in thermally evaporated Ge12Sb25Se63 chalcogenide thi...
The thermally evaporated As20Sb20S60 amorphous film of 800 nm thickness was subjected to light expos...
The thermally evaporated As20Sb20S60 amorphous film of 800 nm thickness was subjected to light expos...
The exposure with band gap light of thermally evaporated As40Sb15Se45 amorphous film of 800 nm thick...
The thermally evaporated amorphous Sb40Se20S40 thin film of 800 nm thickness was subjected to light ...
The influence of thermal annealing on the structure and optical properties of antimony trisulfide (S...
The thermally evaporated amorphous Sb40Se20S40 thin film of 800 nm thickness was subjected to light ...
We report the effects of thermal-annealing and light-soaking on the structure of amorphous (a-) As2S...
Thin films of Sb20S40Se40 of thickness 800 nm were prepared by thermal evaporation method. The as-pr...
Thin films of Sb20S40Se40 of thickness 800 nm were prepared by thermal evaporation method. The as-pr...
Thin films of Sb40Se20S40 with thickness 1000 nm were prepared by thermal evaporation technique. The...
The increase in optical band gap (photo bleaching) due to light illumination was studied at room tem...
The increase in optical band gap (photo bleaching) due to light illumination was studied at room tem...
The photo-induced effects of Ge12Sb25S63 films illuminated with 532 nm laser light are investigated ...
The photo-induced effects of Ge12Sb25S63 films illuminated with 532 nm laser light are investigated ...
The change in photo-induced optical properties in thermally evaporated Ge12Sb25Se63 chalcogenide thi...