High pressure electrical resistivity measurements were carried out on GexSe100-x (0 less-than-or-equal-to x less-than-or-equal-to 40) glasses at ambient and low temperatures using the Bridgman anvil system. All the melt quenched glasses show a discontinuous glassy semiconductor to crystalline metal transition at high pressures. The high pressure phases of Ge-Se samples do not correspond to any of the equilibrium phases of the system. Additionally, the variation of transition pressure (P(T)), ambient resistivity (rho0) and the activation energy (DELTAE(t)) with composition, exhibit a change in behaviour at x = 20 and 33. The unusual variations observed in these glasses are discussed in the light of chemical and percolation thresholds occurri...
The variation of electrical resistivity in the system of glasses Ge17Te83-xTlx, with (1 <= x <= 13),...
The variation of normalized electrical resistivity in the system of glasses Ge15Te85-xSnx with (1 <=...
An irreversible pressure induced semiconductor-to-metal transition in bulk Ge20Te80 glass is observe...
High pressure electrical resistivity measurements were carried out on GexSe100-x (0 less-than-or-equ...
Electrical resistivity measurements have been carried out on bulk Ge-Te-Se glasses in a Bridgman anv...
Electrical resistivity measurements have been carried out on bulk Ge-Te-Se glasses in a Bridgman anv...
Electrical resistivity measurements have been carried out on bulk Ge-Te-Se glasses in a Bridgman anv...
The electrical resistivity of bulk GexTe100-x glasses has been measured as a function of temperature...
The electrical resistivity of bulk GexTe100-x glasses has been measured as a function of temperature...
The pressure dependence of the electrical of the electrical resistivity of bulk GeSe2 glass shows a ...
The pressure dependence of the electrical of the electrical resistivity of bulk GeSe2 glass shows a ...
The electrical resistivity of melt quenched Ge-Te glasses containing Ag has been studied as a functi...
The electrical resistivity of melt quenched Ge-Te glasses containing Ag has been studied as a functi...
The variation in the electrical resistivity of the chalcogenide glasses Ge15Te85-x has been studied ...
The electrical resistivity of bulk Ge<SUB>20</SUB>Te<SUB>80</SUB> has been measured as a function of...
The variation of electrical resistivity in the system of glasses Ge17Te83-xTlx, with (1 <= x <= 13),...
The variation of normalized electrical resistivity in the system of glasses Ge15Te85-xSnx with (1 <=...
An irreversible pressure induced semiconductor-to-metal transition in bulk Ge20Te80 glass is observe...
High pressure electrical resistivity measurements were carried out on GexSe100-x (0 less-than-or-equ...
Electrical resistivity measurements have been carried out on bulk Ge-Te-Se glasses in a Bridgman anv...
Electrical resistivity measurements have been carried out on bulk Ge-Te-Se glasses in a Bridgman anv...
Electrical resistivity measurements have been carried out on bulk Ge-Te-Se glasses in a Bridgman anv...
The electrical resistivity of bulk GexTe100-x glasses has been measured as a function of temperature...
The electrical resistivity of bulk GexTe100-x glasses has been measured as a function of temperature...
The pressure dependence of the electrical of the electrical resistivity of bulk GeSe2 glass shows a ...
The pressure dependence of the electrical of the electrical resistivity of bulk GeSe2 glass shows a ...
The electrical resistivity of melt quenched Ge-Te glasses containing Ag has been studied as a functi...
The electrical resistivity of melt quenched Ge-Te glasses containing Ag has been studied as a functi...
The variation in the electrical resistivity of the chalcogenide glasses Ge15Te85-x has been studied ...
The electrical resistivity of bulk Ge<SUB>20</SUB>Te<SUB>80</SUB> has been measured as a function of...
The variation of electrical resistivity in the system of glasses Ge17Te83-xTlx, with (1 <= x <= 13),...
The variation of normalized electrical resistivity in the system of glasses Ge15Te85-xSnx with (1 <=...
An irreversible pressure induced semiconductor-to-metal transition in bulk Ge20Te80 glass is observe...