The growth of epitaxial InBixSb(1-x) (x = 4 atomic %) layers on highly lattice mis-matched semi-insulating GaAs substrates has been successfully achieved via the traditional liquid phase epitaxy, as a result of optimizing several growth parameters such as III/V mass ratio, growth temperature, cooling rate, etc. Scanning electron micrograph shows sharp interface even at I put resolution. The grown films are n-type in the entire temperature range. The typical value of the carrier density is 9.2 x 10(16)/cm(3) and the Hall mobility is 3.54 x 10(4) cm(2)/V s at 300 K. The room temperature hand gap has been found to be in the range of 0.134-0.140eV. These results indicate that the grown films are comparable to those grown by other sophisticated ...
Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Succes...
International audienceTopological insulators (TIs) are known as promising materials for new nanoelec...
International audienceTopological insulators (TIs) are known as promising materials for new nanoelec...
The growth of epitaxial InBixSb(1-x) (x = 4 atomic %) layers on highly lattice mis-matched semi-insu...
The growth of epitaxial InBixSbð1xÞ (x 4 atomic %) layers on highly lattice mis-matched semi-insula...
The growth of epitaxial $InBi_xAs_ySb_{(1-x-y)}$ layers on highly lattice mis-matched semi-insulatin...
The growth of epitaxial $InBi_xAs_ySb_{(1-x-y)}$ layers on highly lattice mis-matched semi-insulatin...
The growth of epitaxial InSb layers on highly lattice-mismatched semi-insulating GaAs substrates has...
The growth of epitaxial InBixAsySb(1-x-y) layers on highly lattice mis-matched semi-insulating GaAs ...
The growth of epitaxial InSb layers on highly lattice mismatched GaAs substrates has been successful...
The growth of epitaxial InSb layers on highly lattice mismatched GaAs substrates has been successful...
Epitaxial layers of InSb have been grown in InP and GaAs substrates by molecular‐beam epitaxy. The d...
The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been inves...
The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been inves...
Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Succes...
Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Succes...
International audienceTopological insulators (TIs) are known as promising materials for new nanoelec...
International audienceTopological insulators (TIs) are known as promising materials for new nanoelec...
The growth of epitaxial InBixSb(1-x) (x = 4 atomic %) layers on highly lattice mis-matched semi-insu...
The growth of epitaxial InBixSbð1xÞ (x 4 atomic %) layers on highly lattice mis-matched semi-insula...
The growth of epitaxial $InBi_xAs_ySb_{(1-x-y)}$ layers on highly lattice mis-matched semi-insulatin...
The growth of epitaxial $InBi_xAs_ySb_{(1-x-y)}$ layers on highly lattice mis-matched semi-insulatin...
The growth of epitaxial InSb layers on highly lattice-mismatched semi-insulating GaAs substrates has...
The growth of epitaxial InBixAsySb(1-x-y) layers on highly lattice mis-matched semi-insulating GaAs ...
The growth of epitaxial InSb layers on highly lattice mismatched GaAs substrates has been successful...
The growth of epitaxial InSb layers on highly lattice mismatched GaAs substrates has been successful...
Epitaxial layers of InSb have been grown in InP and GaAs substrates by molecular‐beam epitaxy. The d...
The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been inves...
The growth of InAsxSb1-x films on (100) GaSb substrates by liquid-phase epitaxy (LPE) has been inves...
Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Succes...
Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Succes...
International audienceTopological insulators (TIs) are known as promising materials for new nanoelec...
International audienceTopological insulators (TIs) are known as promising materials for new nanoelec...