Composition dependent electrical switching in $Ge_xSe_{35−x}Te_{65} (18 \leq \times \leq 25)$ glasses – the influence of network rigidity and thermal properties

Electrical switching investigations and supportive thermal studies have been undertaken on semiconducting chalcogenide $Ge_xSe_{35−x}Te_{65} (18 \leq \times \leq 25)$ glasses prepared in bulk form. An interesting composition dependent change (memory to threshold) has been observed in the switching behavior of these glasses across the stiffness/rigidity percolation threshold (RPT) at x=20 ( r =2.40). Also, the rigid $Ge_xSe_{35−x}Te_{65}$ glasses are found to retain the threshold behavior for hundreds of switching cycles. Further, the switching voltage of $Ge_xSe_{35−x}Te_{65}$ glasses has been found to exhibit an abrupt increase at the RPT