Numerical analysis has been carried out to determine the deviation of the growth rate from the ampoule lowering rate and the shape of the isotherms during the growth of gallium antimonide using the vertical Bridgman technique in a singlezone furnace. Electrical analogues have been used to model the thermal behaviour of the growth system. The standard circuit analysis technique has been used to calculate the temperature distribution in the growing crystal under various growth conditions. The effects of furnace temperature gradient near the melt-solid interface, the ampoule lowering rate, the ampoule geometry, the thermal conductivity of the melt, the mode of heat extraction from the tip of the ampoule and the extent of lateral heat loss from...
Radially homogeneous bulk alloys of GaxIn1-xSb in the range 0.7 < x < 0.8, have been grown by vertic...
The vertical Bridgman method is a widely used technique for the growth of semiconductor single cryst...
The solidification of the singular CdZnTe in axisymetric Vertical Bridgman (VB) cavity is investigat...
Numerical analysis has been carried out to determine the deviation of the growth rate from the ampou...
This paper presents the results of our interface demarcation experiments during vertical Bridgman gr...
International audienceA numerical optimization method of the vertical Bridgman growth configuration ...
A coordinated theoretical and experimental study of the temperature distributions inside a customize...
Two-dimensional numerical simulations have been developed which represent the thermomechanical behav...
The mathematical model for heat transfer during the Bridgeman crystal growth, using the finite eleme...
This dataset presents the melt-crystal interface position and deflection of BaBrCl crystal with diff...
The effect of growth parameters on the position of the interface in the melt growth of indium antimo...
In a vertical Bridgman crystal growth system, modeling of the transport processes is needed at three...
The heat transfer and liquid phase convection during GaInSb crystal growth via the traveling heater ...
Semiconductor crystal growth is a very complex process occurring on a small geometrical scale. One o...
University of Minnesota Ph.D. dissertation. December 2007. Advisors: Jeffrey J. Derby, Prodromos Dao...
Radially homogeneous bulk alloys of GaxIn1-xSb in the range 0.7 < x < 0.8, have been grown by vertic...
The vertical Bridgman method is a widely used technique for the growth of semiconductor single cryst...
The solidification of the singular CdZnTe in axisymetric Vertical Bridgman (VB) cavity is investigat...
Numerical analysis has been carried out to determine the deviation of the growth rate from the ampou...
This paper presents the results of our interface demarcation experiments during vertical Bridgman gr...
International audienceA numerical optimization method of the vertical Bridgman growth configuration ...
A coordinated theoretical and experimental study of the temperature distributions inside a customize...
Two-dimensional numerical simulations have been developed which represent the thermomechanical behav...
The mathematical model for heat transfer during the Bridgeman crystal growth, using the finite eleme...
This dataset presents the melt-crystal interface position and deflection of BaBrCl crystal with diff...
The effect of growth parameters on the position of the interface in the melt growth of indium antimo...
In a vertical Bridgman crystal growth system, modeling of the transport processes is needed at three...
The heat transfer and liquid phase convection during GaInSb crystal growth via the traveling heater ...
Semiconductor crystal growth is a very complex process occurring on a small geometrical scale. One o...
University of Minnesota Ph.D. dissertation. December 2007. Advisors: Jeffrey J. Derby, Prodromos Dao...
Radially homogeneous bulk alloys of GaxIn1-xSb in the range 0.7 < x < 0.8, have been grown by vertic...
The vertical Bridgman method is a widely used technique for the growth of semiconductor single cryst...
The solidification of the singular CdZnTe in axisymetric Vertical Bridgman (VB) cavity is investigat...