Add to ORKGRf magnetron sputtering technique was employed for preparation of tantalum oxide films on quartz and crystalline silicon (111) substrates held at room temperature by sputtering of tantalum in an oxygen partial pressure of $1X10^{-4} mbar$. The films were annealed in air for an hour in the temperature range 573 – 993 K. The effect of annealing on the chemical binding configuration, structure and optical absorption of tantalum oxide films was systematically studied
The effect of argon ion bombardment on the chemical properties of crystalline Ta2O5 films grown on S...
Reactively evaporated thin films of tantalum oxide are prepared on glass substrate, using electron ...
Reactively sputtered Ta,O, films adhere poorly on bare Si substrate, but the adhesion improves drama...
Rf magnetron sputtering technique was employed for preparation of tantalum oxide films on quartz and...
dc reactive magnetron sputtering technique was employed for deposition of tantalum oxide films on qu...
dc reactive magnetron sputtering technique was employed for deposition of tantalum oxide films on qu...
Good quality tantalum oxide films with a refractive index of 2.10 and an absorption coefficient less...
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on th...
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on th...
Tantalum pentoxide (Ta2O5) thin films (20-50 nm) have been grown by 1064 nm Nd:YAG laser oxidation o...
Rapid thermal processed thin films of reactively sputtered tantalum pentoxide Ta2O5 thin films have ...
The main purpose of this work is to present and to interpret the change of structure and physical p...
Tantalum oxynitride thin solid films have been deposited by reactive magnetron sputtering, using a f...
Tantalum oxynitride thin solid films have been deposited by reactive magnetron sputtering, using a f...
The main purpose of this work is to present and to interpret the change of structure and physical pr...
The effect of argon ion bombardment on the chemical properties of crystalline Ta2O5 films grown on S...
Reactively evaporated thin films of tantalum oxide are prepared on glass substrate, using electron ...
Reactively sputtered Ta,O, films adhere poorly on bare Si substrate, but the adhesion improves drama...
Rf magnetron sputtering technique was employed for preparation of tantalum oxide films on quartz and...
dc reactive magnetron sputtering technique was employed for deposition of tantalum oxide films on qu...
dc reactive magnetron sputtering technique was employed for deposition of tantalum oxide films on qu...
Good quality tantalum oxide films with a refractive index of 2.10 and an absorption coefficient less...
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on th...
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on th...
Tantalum pentoxide (Ta2O5) thin films (20-50 nm) have been grown by 1064 nm Nd:YAG laser oxidation o...
Rapid thermal processed thin films of reactively sputtered tantalum pentoxide Ta2O5 thin films have ...
The main purpose of this work is to present and to interpret the change of structure and physical p...
Tantalum oxynitride thin solid films have been deposited by reactive magnetron sputtering, using a f...
Tantalum oxynitride thin solid films have been deposited by reactive magnetron sputtering, using a f...
The main purpose of this work is to present and to interpret the change of structure and physical pr...
The effect of argon ion bombardment on the chemical properties of crystalline Ta2O5 films grown on S...
Reactively evaporated thin films of tantalum oxide are prepared on glass substrate, using electron ...
Reactively sputtered Ta,O, films adhere poorly on bare Si substrate, but the adhesion improves drama...