Add to ORKGA model is described for grain boundary recombination in polycrystalline semiconductors. This model enables the evaluation of minority carrier lifetime in these materials
Key features of the grain boundary recombination in semiconductors derive from the limitation of the...
Polysilicon is believed to be a key element for continued evolution of silicon integrated circuits. ...
Minority carrier lifetime measurements are a major characterization technique regarding the material...
A model is described for grain boundary recombination in polycrystalline semiconductors. This model ...
A model is described for grain boundary recombination in polycrystalline semiconductors. This model ...
This letter presents a modified version of the grain boundary barrier model for polycrystalline semi...
Polycrystalline semiconductors are presently receiving much attention because of their potential for...
An improved model of minority carrier injection into polysilicon emitter has been proposed. Minority...
The Shockley-Read recombination statistics was recently generalised to include the effects of a fini...
We present a method for extracting local recombination rates from photoluminescence images of double...
A new theory about minority carrier injection into polysilicon emitter was proposed in this paper. T...
This paper presents the analysis and calculation of minority carrier lifetime in silicon solar cell ...
Abstract In this paper, we present a new approach of grain boundary recombination in polycrystalline...
Abstract-A numerical study has been carried out to extract bulk recombination lifetime of minority c...
Measurement of recombination and minority-carrier lifetimes has become a very common activity in cur...
Key features of the grain boundary recombination in semiconductors derive from the limitation of the...
Polysilicon is believed to be a key element for continued evolution of silicon integrated circuits. ...
Minority carrier lifetime measurements are a major characterization technique regarding the material...
A model is described for grain boundary recombination in polycrystalline semiconductors. This model ...
A model is described for grain boundary recombination in polycrystalline semiconductors. This model ...
This letter presents a modified version of the grain boundary barrier model for polycrystalline semi...
Polycrystalline semiconductors are presently receiving much attention because of their potential for...
An improved model of minority carrier injection into polysilicon emitter has been proposed. Minority...
The Shockley-Read recombination statistics was recently generalised to include the effects of a fini...
We present a method for extracting local recombination rates from photoluminescence images of double...
A new theory about minority carrier injection into polysilicon emitter was proposed in this paper. T...
This paper presents the analysis and calculation of minority carrier lifetime in silicon solar cell ...
Abstract In this paper, we present a new approach of grain boundary recombination in polycrystalline...
Abstract-A numerical study has been carried out to extract bulk recombination lifetime of minority c...
Measurement of recombination and minority-carrier lifetimes has become a very common activity in cur...
Key features of the grain boundary recombination in semiconductors derive from the limitation of the...
Polysilicon is believed to be a key element for continued evolution of silicon integrated circuits. ...
Minority carrier lifetime measurements are a major characterization technique regarding the material...