Antiferroelectric lead zirconate (PZ) thin films were deposited by excimer laser ablation technique on Pt-coated Si substrates. Antiferroelectric thin film compositions are potential candidates for high charge storage and microelectromechanical systems. The antiferroelectric nature in PZ thin films was confirmed by means of double hysteresis behaviour in polarisation vs. applied electric field and double butterfly response in capacitance vs. applied voltage measurements. The maximum spontaneous polarisation observed was $37 \mu C/cm^2$ with zero remnant polarisation at an applied electric field of 225 kV/cm. PZ thin films showed a polycrystalline multigrain structure and detail comprehensive study of dielectric relaxation and ac electrical ...
Antiferroelectric lead zirconate (PZ) thin films were deposited by pulsed laser ablation on platinum...
Utilization of antiferroelectric thin films was proposed for high charge storage capacitors and tran...
Utilization of antiferroelectric thin films was proposed for high charge storage capacitors and tran...
Antiferroelectric lead zirconate (PZ) thin films were deposited by excimer laser ablation technique ...
Antiferroelectric lead zirconate (PZ) thin films were deposited by excimer laser ablation technique ...
Antiferroelectric lead zirconate thin films were deposited using KrF (248 nm) excimer laser ablation...
Antiferroelectric lead zirconate thin films were deposited using KrF (248 nm) excimer laser ablation...
Antiferroelectric materials are found to be good alternative material compositions for high charge s...
Antiferroelectric materials are found to be good alternative material compositions for high charge s...
In situ crystalline lead zirconate (PZ) thin films were deposited on platinum metallized silicon sub...
In situ crystalline lead zirconate (PZ) thin films were deposited on platinum metallized silicon sub...
Antiferroelectric materials are found to be good alternative material compositions for high charge s...
In situ crystalline lead zirconate (PZ) thin films were deposited on platinum metallized silicon sub...
Antiferroelectric lead zirconate (PZ) thin films were deposited by pulsed laser ablation on platinum...
Antiferroelectric lead zirconate (PZ) thin films were deposited by pulsed laser ablation on platinum...
Antiferroelectric lead zirconate (PZ) thin films were deposited by pulsed laser ablation on platinum...
Utilization of antiferroelectric thin films was proposed for high charge storage capacitors and tran...
Utilization of antiferroelectric thin films was proposed for high charge storage capacitors and tran...
Antiferroelectric lead zirconate (PZ) thin films were deposited by excimer laser ablation technique ...
Antiferroelectric lead zirconate (PZ) thin films were deposited by excimer laser ablation technique ...
Antiferroelectric lead zirconate thin films were deposited using KrF (248 nm) excimer laser ablation...
Antiferroelectric lead zirconate thin films were deposited using KrF (248 nm) excimer laser ablation...
Antiferroelectric materials are found to be good alternative material compositions for high charge s...
Antiferroelectric materials are found to be good alternative material compositions for high charge s...
In situ crystalline lead zirconate (PZ) thin films were deposited on platinum metallized silicon sub...
In situ crystalline lead zirconate (PZ) thin films were deposited on platinum metallized silicon sub...
Antiferroelectric materials are found to be good alternative material compositions for high charge s...
In situ crystalline lead zirconate (PZ) thin films were deposited on platinum metallized silicon sub...
Antiferroelectric lead zirconate (PZ) thin films were deposited by pulsed laser ablation on platinum...
Antiferroelectric lead zirconate (PZ) thin films were deposited by pulsed laser ablation on platinum...
Antiferroelectric lead zirconate (PZ) thin films were deposited by pulsed laser ablation on platinum...
Utilization of antiferroelectric thin films was proposed for high charge storage capacitors and tran...
Utilization of antiferroelectric thin films was proposed for high charge storage capacitors and tran...